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D45H11 60V PNP TO220 Transistor Data

Key transistor data for the D45H11 transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.

The D45H11 is a PNP power transistor packaged in a TO220 package and it has a dissipation of 50W although some specifications may rate it a little higher at 70 W depending upn the manufacturer, etc.

The PNP D45H11 is the complement for the NPN D44H11 transistor and together thay are able to provide a complementary output pair for efficient power output stages.

Key details and performance parameters for the D45H11 transistor.

D45H11 transistor datasheet parameters & data
Parameters	Details
Transistor type	PNP power transistor
Package type	TO220
V_CEO max (V)	-80V
V_EBOmax (V)	-5V
V_CEsat (V)	1V @ I 8A and IB = 0.4A
I_C max (mA)	10A
T_J Max °C	150°C
P_TOT W	50W (some manufacturers rate it at 60 or 70W)
f_T min (MHz)	~40
h_fe	60 for IC = 2A and VCE = 1V 40 for IC = 4A and VCE = 1V
Similar / equivalents

Outline & pinout:

Explanation of transistor parameters

Parameter	Explanation
V_CBO Max	Maximum collector-base voltage with emitter open circuit .
V_CEO Max	Maximum collector-emitter voltage with base open circuit.
V_EBO Max	Maximum emitter-base voltage with collector open circuit.
V_CEsat (included where applicable)	The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch).
I_C Max	Maximum collector current.

Parameter	Explanation
T_J	Maximum junction temperature.
P_TOT Max	Maximum device dissipation normally in free air at 25°C unless other conditions indicated.
f_T Min	Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity.
C_OB Max	Maximum collector capacitane, normally measured with emitter open circuit.
h_FE	DC current gain for H_FE at I_C. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.]
P_TOT Max	Maximum device dissipation normally in free air at 25°C unless other conditions indicated.

These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

Read more about . . . . Transistor Data-sheet Specifications & Parameters.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The D45H11 is available from a number of stockists and electronic component distributors many of which are given in the table below.

D45H11 Component Distributor, Stock and Pricing

• Notable features

The D45H11 is a medium-power PNP silicon bipolar transistor in a TO-220 package, optimized for high-speed switching and low-saturation amplification in general-purpose power circuits.

High Current Handling : Continuous collector current up to -10 A, supporting robust performance in high-load applications.
Low Saturation Voltage : VCE(sat) maximum of -1.0 V at IC = -8 A, minimizing conduction losses for efficient switching.
Fast Switching Speed : Current gain bandwidth product (fT) of 40 MHz, ideal for high-frequency PWM and regulator circuits.
High Power Dissipation : Up to 50 - 60 W dependent upon the manufacturer, with low thermal resistance (2.1 °C/W junction-to-case) for reliable thermal management.
Wide Voltage Rating : Collector-emitter breakdown voltage (VCEO) of -80 V, suitable for medium-voltage power supplies.
Good Current Gain : hFE minimum of 40 at IC = -4 A, providing efficient drive with low base current.
Low Collector Leakage : ICBO maximum of -10 μA at VCB = -80 V, ensuring minimal off-state losses.
Complementary to D44H11 : Forms push-pull pairs for balanced audio and motor drive designs.

• Typical applications summary

Application Category	Typical Use Case	Device Feature Utilised
Power Amplifiers	Output stages in class AB audio amplifiers.	High hFE (40 min) and low VCE(sat) for low-distortion, efficient amplification.
Switching Circuits	High-speed regulators and converters where fast switching is critical.	40 MHz fT and low saturation voltage for minimal switching losses.
Motor Drives	Low-side drivers in H-bridge configurations for DC motors.	-10 A current handling and 50 - 60W (typical) dissipation for robust inductive load control.
Power Supplies	Series pass elements in linear regulators.	-80 V rating and low leakage (ICBO -10 μA) for stable voltage regulation.
General Linear Applications	Driver stages in instrumentation and sensor amplification.	Wide temperature range (-55°C to 150°C) and multi-epitaxial planar technology for reliability.