Home » Component data » MOSFET data » this page

NX5020UNBK 50V N-Channel Trench MOSFET

Data for the NX5020UNBK MOSFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.

The NX5020UNBK is an N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 SMD plastic package.

the device uses Trench MOSFET technology to provide a low threshold voltage and very fast switching.

Key details and performance parameters for the NX5020UNBK MOSFET.

NX5020UNBK MOSFET datasheet parameters & data
Parameters	Details
Brief description	50 V, N-channel Trench MOSFET
Package type	SOT23
Operational mode	Enhancement
Channel type	N-channel
Drain to Source voltage V_DSS	50V
Gate to source voltage V_GSS	-20V to +20V
Maximum drain current continuous I_D	330mA with VGS = 1-V at 25°C
Zero gate voltage drain current I_DSS	1µA for VDS = 50V, VGS = 0V at 25°C
Gate threshold voltage V_GS(th)	0.5V min, 0.7V typ, 0.95V max for ID = 250µA VGS = 0V at 25°C
Static drain source ON resistance R_DS(ON)	1.3Ω typ, 1.8Ω max for VGS = 10V, ID = 330mA at 25°C
Forward transconductance g_FS	0.8 typ
Input capacitance	20.5pF typ
Output capacitance	3.3pF typ
Reverse transfer capacitance	2.1pF typ
T_J °C	150
P_TOT mW	310mW
Primary manufacturer	Nexperia

Outlines & pinout:

Explanation of MOSFET parameters

Parameter	Explanation
Operational mode	This details whether the FET is an enhancement or depletion mode
Channel type	The channel of the MOSFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier.
Drain to Source voltage V_DSS	This is the maximum voltage that can be sustained between the drain and source
Gate to source voltage V_GSS	This is the maximum voltage that can be sustained between the drain and the gate.
Maximum drain current continuous I_D	This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values

Parameter	Explanation
Zero gate voltage drain current I_DSS	This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this.
Gate threshold voltage V_GS(th)	This is the minimum gate-to-source voltage, V_GS required to create a conductive channel between the source and drain terminals
Static drain source ON resistance R_DS(ON)	This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this.
Drain source ON voltage V_DS(ON)	This is the voltage across the device when it is turned on. Again the test conditions are given.
Forward transconductance g_FS	Forward transconductance also given the letters g_m is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔV_GS, with the drain-source voltage, V_DS held constant.

These are the main MOSFET parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.

Read more about . . . . FET Specifications & Parameters.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The NX5020UNBK is available from a number of stockists and electronic component distributors many of which are given in the table below.

NX5020UNBK Component Distributor, Stock and Pricing

• Further details

The device can be used for many general purpose applications but it is ideally suited for relay driver circuits, high-speed line driver circuits, low-side load switching, and many general switching circuits.