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ES1K Fast Recovery PN Junction Diode Data
Key data for the ES1K 800V fast recovery semiconductor diode including key electrical parameters, performance, features, outline, package type and many other key datasheet details.
Key details and performance parameters for the ES1K diode.
| ES1K diode datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Diode type | Surface mount superfast rectifier |
| Package type | DO214 (also known as SMA 403) |
| Repetitive peak reverse voltage, VRRM | 800V |
| Working peak reverse voltage, VRWM | 800V |
| DC blocking voltage, VR | 800V |
| RMS reverse voltage, VR(RMS) | 560V |
| Forward continuous current, IF | 1A |
| Non-repetitive forward surge current, IFSM | 30A half sine wave 8.3ms |
| Maximum reverse current IR | 5.0µA at 25°C and 50 0r 100µA at 100°C at the rated voltage specification depends on manufacturer. |
| Junction temperature (°C) | -50 - +150°C |
| Forward voltage VF | 1.7V @ 1A |
| Diode junction capacitance CD | 7.0pF at VR = 4V |
| Reverse recovery time (Trr) | typically 35ns |
Outline & pinout:
Explanation of major diode parameters
| Parameter | Explanation |
|---|---|
| Repetitive peak reverse voltage, VRRM | This is the maximum value of the short period peak reverse voltage that can be sustained. |
| Working peak reverse voltage, VRWM | This is the maximum value of the continuous reverse voltage that can be applied to the diode. |
| DC blocking voltage, VR | This is the maximum reverse DC voltage that should be applied across the diode. |
| RMS reverse voltage, VR(RMS) | As many AC waveforms are quoted in RMS, this is the maximum reverse voltage that can be sustained where the voltage is expressed in terms of its RMS value. |
| Forward continuous current, IF | This is the maximum forward current that can be sustained by the diode. |
| Average rectified current, IF | This is the maximum average current value that can be handled by the diode. The parameter often states the load as this will affect the operation of the diode. |
| Non-repetitive forward surge current, IFSM | This is the maximum surge current that can be handled - it should only be present for a short time. |
| Parameter | Explanation |
|---|---|
| Power dissipation, PTOT | The maximum power dissipation that can be sustained within the device. |
| Junction temperature (°C) | This is the maximum temperature of the PN junction that can be sustained. Remember that the junction temperature can be much higher than the ambient temperature of the equipment. |
| Forward voltage VF | This parameter gives the forward voltage drop for a particular current passed through the diode. |
| Breakdown voltage VBR | This is the minimum voltage at which the diode may breakdown. If the current is not limited it will lead to the destruction of the device. |
| Leakage current IR | This is the current that flows under stated conditions when the diode is reverse biassed. |
| Diode capacitance CD | The diode capacitance, CD may also be referred to as the junction capacitance, CJ. All diodes have a certain capacitance across the PN junction. The value will be stated for a given reverse voltage. |
| Reverse recovery time | If a diode is initially driven in forward bias, and the polarity suddenly switches to reverse bias, the diode will still remain conducting for some time. The reverse recovery time is the time required for conduction to settle into the reverse bias state. |
These are the main diode parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the diode.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The ES1K is available from a number of stockists and electronic component distributors many of which are given in the table below.
ES1K Component Distributor, Stock and Pricing
• Notable features
The ES1K is a surface-mount super fast recovery rectifier diode designed for high-efficiency applications in power electronics.
Super Fast Recovery Time : Features a reverse recovery time (trr) of 35ns, enabling efficient high-frequency switching and reducing power losses.
Glass Passivated Die Construction : Provides enhanced reliability and protection against environmental factors like moisture.
Low Forward Voltage Drop : Maximum VF of 1.7V at 1A, minimizing conduction losses in forward bias.
High Surge Current Capability : Handles peak forward surge current (IFSM) up to 30A, ideal for transient-heavy circuits.
Low Reverse Leakage : Reverse current (IR) as low as 5μA at 25°C, ensuring minimal power dissipation in reverse bias.
Built-in Strain Relief : Facilitates automated placement and improves mechanical robustness in SMT assembly.
Wide Operating Temperature Range : Functions from -65°C to +150°C, suitable for harsh environments.
Flame Retardant Package : UL 94V-0 rated plastic encapsulation for safety in consumer and industrial applications.
High Voltage Rating : Supports up to 800V repetitive peak reverse voltage (VRRM), allowing use in high-voltage systems.
• Typical applications summary
| Application Category | Typical Use Case | Device Feature Utilised |
|---|---|---|
| Switching Mode Power Supplies (SMPS) | High-frequency rectification in output stages of AC-DC adapters and chargers. | Super fast recovery time (35ns) to minimize switching losses and improve efficiency. |
| Inverters and Converters | Freewheeling diode in DC-DC buck/boost converters for energy storage systems. | High surge current capability (30A) and low forward voltage drop for handling inductive loads. |
| Consumer Electronics | Rectification in power adapters for laptops, smartphones, and LED drivers. | Low profile SMA package and built-in strain relief for compact, automated assembly. |
| Automotive Systems | Battery chargers and voltage regulators in electric vehicles or infotainment systems. | Wide temperature range (-65°C to +150°C) and glass passivated construction for reliability in harsh conditions. |
| Telecommunication Equipment | Power conversion in base stations and network switches. | Low reverse leakage and high voltage rating (800V) for stable operation in high-frequency environments. |
| Industrial Controls | Rectification in motor drives and control circuits. | Flame retardant package and high surge capability for safety and durability in demanding setups. |
• Diodes in ES1 Series
| Part Number | VRRM (Maximum Repetitive Peak Reverse Voltage) | VRMS (Maximum RMS Voltage) |
|---|---|---|
| ES1A | 50 V | 35 V |
| ES1B | 100 V | 70 V |
| ES1C | 150 V | 105 V |
| ES1D | 200 V | 140 V |
| ES1E | 300 V | 210 V |
| ES1G | 400 V | 280 V |
| ES1K | 600 V | 420 V |
| ES1K | 800 V | 560 V |
| ES1K | 1000 V | 700 V |
Written by Ian Poole .
Experienced electronics engineer and author.
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