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DXTN80030DFG Transistor Data
Key transistor data for the DXTN80030 transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.
The DXTN80030DFG is one of a series of modern very low on resistance bipolar transistors from Diodes Inc. which are intended for high performance automotive circuits, although there are many other uses.
The DXTN80030DFG is similar to the DXTN78030DFG and DXTN78060DFG but it has a higher voltage capability opening its use out to more applications.
However the current capability is lower, the saturation voltage is slightly higher, amd hFE is lower.
Key details and performance parameters for the DXTN80030 transistor.
| DXTN80030 transistor datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Transistor type | NPN |
| Package type | PowerDI 3333-8 |
| VCBO max (V) | 80V |
| VCEO max (V) | 30V |
| VEBOmax (V) | 8V |
| VCEsat (V) | 28mV typ at IC = 100mA and IB = 1mA 17mV typ 30mV max at IC = 1A and IB = 100mA 40mV typ 65mV max at IC = 2A and IB = 40mA 75mV typ 125mV max at IC = 5A and IB = 100mA 120mV typ 160mV max at IC = 10A and IB = 500mA |
| IC max | 5A with device mounted with collector tab on FR4PCB in still air 10A with device mounted with collector tab on 15mm x 15mm 2oz copper |
| TJ °C | -55 - +175°C |
| PTOT mW | 900mW, 2.4W when mounted on 25 x 25mm 2oz copper |
| fT min (MHz) | 100 MHz min, 130MHz typ |
| COB | 50pF |
| hfe | 380 typ for Ic = 10mA & VCE = 2V 300 min, 380 typ, 550 max for Ic = 100mA & VCE = 2V 270 min, 365 typ for Ic = 1A & VCE = 2V 250 min, 350 typ for Ic = 2A & VCE = 2V 200 min, 310 typ for Ic = 5A & VCE = 2V 100 min, 250 typ for Ic = 10A & VCE = 2V |
| Primary manufacturer | Diodes Inc |
Outline & pinout:
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The DXTN80030 is available from a number of stockists and electronic component distributors many of which are given in the table below.
DXTN80030 Component Distributor, Stock and Pricing
• Notable features
The DXTN80030DFGQ is a 30V NPN ultra-low saturation voltage transistor from Diodes Incorporated, optimized for high-efficiency switching in compact, high-current applications.
Ultra-Low Saturation Voltage: VCE(sat) < 30 mV at 1A, enabling minimal power loss and high efficiency in switching operations.
High Current Capability: Continuous collector current up to 10A and peak pulse current up to 20A, suitable for medium-power demands.
Robust Voltage Ratings: BVCEO > 30V, BVCBO > 80V, and BVEBO > 8V, providing strong withstand in various circuits.
High Gain Characteristics: hFE ranging from 300-550 at 100mA, ensuring reliable amplification and switching.
Wide Temperature Range: Operational from -55°C to +175°C, ideal for harsh environments.
Automotive Qualification: AEC-Q101 qualified and PPAP capable, manufactured in IATF 16949 certified facilities.
Compact Thermally Efficient Package: PowerDI3333-8 with wettable flanks for improved solderability and AOI inspection.
Complementary Pairing: Pairs with DXTP80030DFGQ PNP transistor for push-pull configurations.
• Typical applications summary
| Application Category | Typical Use Case | Device Feature Utilised |
|---|---|---|
| Gate Driving | MOSFET and IGBT gate drivers | Ultra-low saturation voltage and high gain for efficient drive |
| Switching | Load switches in automotive and industrial systems | High current handling and low power dissipation |
| Power Regulation | Low-voltage regulation circuits | Voltage ratings and thermal efficiency |
| Power Conversion | DC to DC converters | Peak pulse current and low saturation resistance |
| Actuator Control | Drivers for motors, solenoids, relays, and actuators | Automotive qualification and high-temperature operation |
Differences between DXTN78030 and DXTN80030
It might appear that the DXTN78030 and DXTN80030 are very similar devices, but there are some significant differences between the two which may alter a decision about which device to select.
1. Voltage Handling:
The DXTN80030 is the "higher voltage" version of the two. It offers a VCEO of 100V, compared to the 80V of the DXTN78030.
If your circuit operates near or above 60V, the DXTN80030 provides a larger safety margin against transient voltage spikes.
2. Saturation Characteristics:
Both transistors are marketed as "Ultra-Low Saturation." This means that when the transistor is fully turned on (saturated), the voltage drop between the collector and emitter is exceptionally small.
Thermal Efficiency: Because P=V×I, a lower saturation voltage results in significantly less heat dissipation within the transistor.
Efficiency: This makes both ideal for battery-powered devices where maximizing efficiency is critical.
3. AEC-Q101 Qualification
The DXTN80030 will often be listed as DXTN80030DFGQ, where the "Q" indicates it is AEC-Q101 qualified. This means it has undergone rigorous testing for automotive applications.
While DXTN78030 versions exist with this qualification, the 100V rating of the 80030 makes it a more common choice for automotive 48V systems.
Summary: Which one should you use?
Use the DXTN78030 if your operating voltage is strictly below 80V and you want the most cost-effective option for high-speed switching or power management.
Use the DXTN80030 if you require a higher breakdown voltage (up to 100V) or if you are designing for automotive systems that require an extra layer of voltage protection and AEC-Q101 compliance.
Written by Ian Poole .
Experienced electronics engineer and author.
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