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DXTN80060DFG Transistor Data
Key transistor data for the DXTN80060 transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.
The DXTN80060DFG is one of a series of modern very low on resistance bipolar transistors from Diodes Inc. which are intended for high performance automotive circuits, although there are many other uses.
Key details and performance parameters for the DXTN80060 transistor.
| DXTN80060 transistor datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Transistor type | NPN |
| Package type | PowerDI 3333-8 |
| VCBO max (V) | 100V |
| VCEO max (V) | 60V |
| VEBOmax (V) | 8V |
| VCEsat (V) | 50mV typ at IC = 100mA and IB = 1mA 45mV typ 80mV max at IC = 1A and IB = 20mA 22mV typ 40mV max at IC = 1A and IB = 100mA 70mV typ 120mV max at IC = 2A and IB = 40mA 75mV typ 130mV max at IC = 4A and IB = 200mA 100mV typ 200mV max at IC = 6.5A and IB = 650mA |
| IC max | 4A with device mounted with collector tab on FR4PCB in still air 6.5A with device mounted with collector tab on 15mm x 15mm 2oz copper |
| TJ °C | -55 - +175°C |
| PTOT mW | 900mW, 2.4W when mounted on 25 x 25mm 2oz copper |
| fT min (MHz) | 100 MHz min, 140MHz typ |
| COB | 50pF |
| hfe | 250 min 370 typ for Ic = 10mA & VCE = 2V 300 min, 370 typ, 550 max for Ic = 100mA & VCE = 2V 260 min, 3505 typ for Ic = 1A & VCE = 2V 250 min, 335 typ for Ic = 2A & VCE = 2V 140 min, 250 typ for Ic = 4A & VCE = 2V 140 min, 250 typ for Ic = 4A & VCE = 2V 35 min, 110 typ for Ic = 6.5A & VCE = 2V |
| Primary manufacturer | Diodes Inc |
Outline & pinout:
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The DXTN80060 is available from a number of stockists and electronic component distributors many of which are given in the table below.
DXTN80060 Component Distributor, Stock and Pricing
• Notable features
The DXTN80060DFGQ is a 60V NPN ultra-low saturation voltage transistor from Diodes Incorporated, optimized for high-efficiency switching in a compact PowerDI3333-8 package.
Ultra-Low Saturation Voltage: VCE(sat) < 40mV at 1A, enabling minimal power loss and high efficiency in switching operations.
High Current Handling: Continuous collector current up to 6.5A and peak pulse current up to 15A, suitable for medium-power applications.
Robust Voltage Ratings: BVCEO > 60V, BVCBO > 100V, and BVEBO > 8V, providing strong voltage withstand capabilities.
High Current Gain: hFE ranging from 250-550 at 100mA, ensuring efficient amplification and switching.
Wide Temperature Range: Operational from -55°C to +175°C, ideal for harsh environments.
Automotive Qualification: AEC-Q101 qualified and PPAP capable, manufactured in IATF 16949 certified facilities.
Compact Thermally Efficient Package: PowerDI3333-8 with wettable flanks for improved solderability and optical inspection.
Complementary Pairing: Pairs with DXTP80060DFGQ PNP transistor for complementary circuit designs.
• Typical applications summary
| Application Category | Typical Use Case | Device Feature Utilised |
|---|---|---|
| Gate Driving | MOSFET and IGBT gate drivers | Ultra-low saturation voltage and high gain for efficient drive |
| Switching | Load switches | High current handling and low power dissipation |
| Power Regulation | Low-voltage regulation | Voltage ratings and efficiency |
| Power Conversion | DC to DC converters | Peak pulse current capability and thermal performance |
| Actuator Control | Drivers for motors, solenoids, relays, and actuators | Automotive qualification and high-temperature operation |
Written by Ian Poole .
Experienced electronics engineer and author.
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