Home   » Component data   » Transistor data » this page

FMMT617 Transistor Data

Key transistor data for the FMMT617 transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.

The FMMT617 is a popular 15V NPN low saturation switching transistor in an SOT23 package.

The device is available from a variety of manufacturers as it has been in production for very many years and in many respects it has become an industry standard device.



Key details and performance parameters for the FMMT617 transistor.


FMMT617 transistor datasheet parameters & data
 
Parameters Details
Transistor type NPN low saturation
Package type SOT23
VCBO max (V) 15V
VCEO max (V) 15V
VEBOmax (V) 7V
VCEsat (V) 8mV typ, 14mV max @ I 10 mA & VCE = 2V
70mV typ, 100mV max @ I 1 A & IB = 10mA
150mV typ, 200mV max @ I 3 A & IB = 50mA
IC max (A) 3A
TJ Max °C -55 - + 150°C
PTOT W 625mW for given PCB heatsink area
fT min (MHz) 80 min, 120 typ for IC = 50mA and VCE = 10V
COB 30pF typ, 40pF max
hfe 200 min, 415 typ for IC = 10mA and VCE = 2V
300 min, 450 typ for IC = 200mA and VCE = 2V
200 min, 320 typ for IC = 3A and VCE = 2V
150 min, 240 typ for IC = 5A and VCE = 2V
Similar / equivalents



    Outline & pinout:



Explanation of transistor parameters


Parameter Explanation
VCBO Max Maximum collector-base voltage with emitter open circuit .
VCEO Max Maximum collector-emitter voltage with base open circuit.
VEBO Max Maximum emitter-base voltage with collector open circuit.
VCEsat (included where applicable) The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch).
IC Max Maximum collector current.

Parameter Explanation
TJ Maximum junction temperature.
PTOT Max Maximum device dissipation normally in free air at 25°C unless other conditions indicated.
fT Min Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity.
COB Max Maximum collector capacitane, normally measured with emitter open circuit.
hFE DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.]
PTOT Max Maximum device dissipation normally in free air at 25°C unless other conditions indicated.

These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

 

Read more about . . . . Transistor Data-sheet Specifications & Parameters.


Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.



Notes and supplementary information

 

  •   Availability & sources

The FMMT617 is available from a number of stockists and electronic component distributors many of which are given in the table below.


FMMT617 Component Distributor, Stock and Pricing

 


  •   Notable features

The FMMT617 is a high-current NPN bipolar junction transistor designed for low-saturation switching and amplification in compact SOT23 packages, offering exceptional efficiency for portable and space-constrained applications.

  • Low Saturation Resistance :   RCE(sat) of 50 mΩ maximum, enabling ultra-low voltage drop (8 mV typical) for minimal power losses in switching.

  • High Continuous Current :   3 A collector current rating, supporting demanding load-driving tasks in battery-operated devices.

  • Peak Pulse Capability :   Up to 12 A pulsed current, ideal for handling transient surges without failure.

  • Excellent Current Gain :   hFE maintained high (up to 100) even at 12 A pulsed, ensuring efficient drive with low base current.

  • Compact SOT23 Package :   Surface-mount design with 625 mW power dissipation, perfect for high-density PCB layouts. However there must be sufficient PCB surface area to remove the heat.

  • Low VCE Breakdown :   BVCEO > 15 V, suitable for low-voltage systems like 5 V-12 V rails.

  • Fast Switching Speed :   Optimized for rapid on/off transitions in PWM and logic-level applications.

  • Versatile Temperature Range :   Operates from -55°C to 150°C, enhancing reliability in industrial and automotive environments.


  •   Typical applications summary

Application Category Typical Use Case Device Feature Utilised
Switching Circuits Load drivers in portable electronics and relays. Low RCE(sat) (50 mΩ) and 3 A continuous current for efficient, low-loss operation.
Audio Amplifiers Driver stages in small audio modules. High hFE and fast switching for clean amplification.
Power Management DC-DC converters and battery chargers. 12 A peak pulse current for handling inrush and transients.
LED Drivers High-current LED arrays in displays. Extremely low saturation voltage (8 mV typ) for bright, efficient lighting.
Automotive Electronics Sensor interfaces and control modules. Wide temperature range (-55°C to 150°C) and 625 mW dissipation for reliability.

Ian Poole   Written by Ian Poole .
  Experienced electronics engineer and author.




    Return to Component Data menu . . .