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MBRF10150 2 x 5A 100V Schottky diode Schottky Diode Data
Key data for the MBRF10150 2 x 5A 100V Schottky diode Schottky diode including key electrical parameters, performance, features, outline, package type and many other key datasheet details.
The MBRF10150 Schottky barrier rectifier is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products.
The MBRF10150 is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity protection diodes.
Key details and datasheet performance parameters for the MBRF10150 diode.
| MBRF10150 diode datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Diode type | 2 x 5A 100V dual Schottky rectifier diode |
| Package type | TO220 |
| Repetitive peak reverse voltage, VRRM | 150V |
| Working peak reverse voltage, VRWM | 150V |
| DC blocking voltage, VR | 150V |
| Forward average current, IF(AV) | 10A total, 5A per diode |
| Non-repetitive forward surge current, IFSM | 120A half wave 8.3ms single phase |
| Junction temperature (°C) | 150 |
| Forward voltage VF | 0.87V at 3A pulse at 25°C, 0.93V at 5A pulse at 25°C 0.67V at 3A pulse at 125°C, 0.73V at 5A pulse at 125°C |
| Reverse leakage IR (per leg) | 1mA at 25°C and 7mA at 125°C - both at rated reverse voltage. |
| Diode capacitance CT | 200 per diode |
| Primary manufacturer | Littlefuse / On Semiconductor |
Outline & pinout:
Explanation of major diode parameters
| Parameter | Explanation |
|---|---|
| Repetitive peak reverse voltage, VRRM | This is the maximum value of the short period peak reverse voltage that can be sustained. |
| Working peak reverse voltage, VRWM | This is the maximum value of the continuous reverse voltage that can be applied to the diode. |
| DC blocking voltage, VR | This is the maximum reverse DC voltage that should be applied across the diode. |
| RMS reverse voltage, VR(RMS) | As many AC waveforms are quoted in RMS, this is the maximum reverse voltage that can be sustained where the voltage is expressed in terms of its RMS value. |
| Forward continuous current, IF | This is the maximum forward current that can be sustained by the diode. |
| Average rectified current, IF | This is the maximum average current value that can be handled by the diode. The parameter often states the load as this will affect the operation of the diode. |
| Non-repetitive forward surge current, IFSM | This is the maximum surge current that can be handled - it should only be present for a short time. |
| Parameter | Explanation |
|---|---|
| Power dissipation, PTOT | The maximum power dissipation that can be sustained within the device. |
| Junction temperature (°C) | This is the maximum temperature of the PN junction that can be sustained. Remember that the junction temperature can be much higher than the ambient temperature of the equipment. |
| Forward voltage VF | This parameter gives the forward voltage drop for a particular current passed through the diode. |
| Breakdown voltage VBR | This is the minimum voltage at which the diode may breakdown. If the current is not limited it will lead to the destruction of the device. |
| Leakage current IR | This is the current that flows under stated conditions when the diode is reverse biassed. |
| Diode capacitance CD | The diode capacitance, CD may also be referred to as the junction capacitance, CJ. All diodes have a certain capacitance across the PN junction. The value will be stated for a given reverse voltage. |
| Reverse recovery time | If a diode is initially driven in forward bias, and the polarity suddenly switches to reverse bias, the diode will still remain conducting for some time. The reverse recovery time is the time required for conduction to settle into the reverse bias state. |
These are the main Schottky diode parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the diode.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The MBRF10150 is available from a number of stockists and electronic component distributors many of which are given in the table below.
MBRF10150 Component Distributor, Stock and Pricing
• Further details
As a result of the fact that the current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to the normal junction diode forward and reverse recovery transients due to minority carrier injection and stored charge.
The MBRF10150 Schottky diode features a high junction temperature capability, a guard ring for enhanced ruggedness and long term reliability, it provides a low forward voltage drop, and it can provide high frequency operation.
it is ideal for applications in switch mode power supply circuits, DC-DC converters, as free wheeling diodes and in polarity protection.
Written by Ian Poole .
Experienced electronics engineer and author.
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