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APT100GN60B2 IGBT Data

Data for the APT100GN60B2 600V IGBT including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.



Key details and performance parameters for the APT100GN60B2 IGBT, insulated gate bipolar transistor.


APT100GN60B2 IGBT insulated gate bipolar transistor datasheet parameters & data
 
Parameters Details
Brief description 600V FieldStop TrenchGate IGBT
Package type TO247
Collector-Emitter Voltage VCES 600V
Gate-emitter voltage VGES ±30V
Maximum continuous collector current IC 229A at 25°C, 135A at 110°C
Maximum collector current pulsed ICM 300A
Collector power dissipation PC 625W
Collector-emitter breakdown voltage BVCES 600V min
Gate-emitter threshold voltage VGE(th) 5.0V min, 5.8V typ, 6.5V max with IC = 1mA, and VCE = VGE at 25°C
Gate-emitter leakage current IGES 600nA with VGE = ±20V
Input capacitance 6000pF typ
Output capacitance 560pF typ
Reverse transfer capacitance capacitance 200pF typ
Maximum junction temperature TJ °C 175°C
Primary manufacturer Advanced Power Technology / Microchip

    Outlines & pinout:

 

APT100GN60B2 outline & pinout



Explanation of IGBT parameters


Parameter Explanation
Collector-Emitter Voltage VCES This is the absolute maximum operating voltage for the IGBT. It is often specified at a given temperature.
Gate-emitter voltage VGES This is te maximum operating voltage between the gate and emitter of the device.
Transient gate-emitter voltage VGEM This is the maximum gate emitter voltage that can be withstood for a short period - the time period of the pulse should be specified.
Maximum continuous collector current IC This is the maximum continuous current that the device can handle. This is normally specified for one or more temperatures.
Maximum collector current pulsed ICM This is the maximum current that cna be handled for a short period - the period of the pulse should also be specified.
Collector power dissipation PC This is the maximum power that can be dissipated by the collector - often a temperature is specified and often a derating as well for higher temperatures.
Collector-emitter breakdown voltage BVCES This is the voltage at which the device becomes liable to break down. It is greater or equal to the maximum operating voltage.
Gate-emitter threshold voltage VGE(th) This is the voltage at which the device starts to turn on.

Parameter Explanation
Gate-emitter leakage current IGES The leakage current into / out of the gate. Being a MOS-type device this is normally very low.
Collector-emitter saturation voltage VCE(sat) Similar to a standard bipolar transistor, an IGBT has a saturation voltage when the device is fully turned on.
Input capacitance This is the capacitance for the gate of the device
Output capacitance This is the capacitance seen at the output of the IGBT.
Reverse transfer capacitance capacitance This is the capacitance between the gate and the collector terminals.
Transconductance This is defined as the ratio of a change in the collector current to the corresponding change in the gate-emitter voltage and it is measured in terms of conductance in Siemens.
Maximum junction temperature TJ °C This is the maximum temperature that the junction can withstand and it should be remembered that the junction will be above the package temperature and the external ambient temperature.

These are the main IGBT parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.

 

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Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.



Notes and supplementary information

 

  •   Availability & sources

The APT100GN60B2 is available from a number of stockists and electronic component distributors many of which are given in the table below.


APT100GN60B2 Component Distributor, Stock and Pricing

 


  •   Further details

The APT100GN60B2 utilises Field Stop and Trench Gate technologies, to give very low V CE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss.

Easy paralleling of these devices is possible as a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient.

A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.

Ian Poole   Written by Ian Poole .
  Experienced electronics engineer and author.




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