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APT102GA60B2 IGBT Data

Data for the APT102GA60B2 IGBT including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.

The APT102GA60B2 uses a POWER MOS 8 technology to provide a high speed Punch-Through switch-mode IGBT.

Low E off of the device is achieved through leading technology silicon design and lifetime control processes. A reduced E off - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies.

Low gate charge and a greatly reduced ratio of C res /Cies provide excellent noise immunity, short delay times and simple gate drive.

The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.



Key details and performance parameters for the APT102GA60B2 IGBT, insulated gate bipolar transistor.


APT102GA60B2 IGBT insulated gate bipolar transistor datasheet parameters & data
 
Parameters Details
Brief description 600V 102A POWER MOS 8 Punch-Through IGBT
Package type TO247
Collector-Emitter Voltage VCES 600V
Gate-emitter voltage VGE ±30V
Maximum continuous collector current IC 183A at 25°C, 102A at 100°C
Collector power dissipation PC 780W at 25°C
Collector-emitter breakdown voltage BVCES 600V min
Gate-emitter threshold voltage VGE(th) 3V min, 4.5V typ, 6V max for VGE = VCE and IC = 2.5mA
Gate-emitter leakage current IGES ±100nA for GVGS = *±30V
Collector-emitter ON voltage VCE(ON) 2.0V typ, 2.5V max at VGE = 15V and IC = 62A at 25°C
1.9V typ at VGE = 15V and IC = 62A at 125°C
Input capacitance 8170pF typ
Output capacitance 630pF typ
Reverse transfer capacitance capacitance 78pF typ
Maximum junction temperature TJ °C 150°C
Primary manufacturer Microchip

    Outlines & pinout:

 

APT102GA60B2 outline & pinout



Explanation of IGBT parameters


Parameter Explanation
Collector-Emitter Voltage VCES This is the absolute maximum operating voltage for the IGBT. It is often specified at a given temperature.
Gate-emitter voltage VGES This is te maximum operating voltage between the gate and emitter of the device.
Transient gate-emitter voltage VGEM This is the maximum gate emitter voltage that can be withstood for a short period - the time period of the pulse should be specified.
Maximum continuous collector current IC This is the maximum continuous current that the device can handle. This is normally specified for one or more temperatures.
Maximum collector current pulsed ICM This is the maximum current that cna be handled for a short period - the period of the pulse should also be specified.
Collector power dissipation PC This is the maximum power that can be dissipated by the collector - often a temperature is specified and often a derating as well for higher temperatures.
Collector-emitter breakdown voltage BVCES This is the voltage at which the device becomes liable to break down. It is greater or equal to the maximum operating voltage.
Gate-emitter threshold voltage VGE(th) This is the voltage at which the device starts to turn on.

Parameter Explanation
Gate-emitter leakage current IGES The leakage current into / out of the gate. Being a MOS-type device this is normally very low.
Collector-emitter saturation voltage VCE(sat) Similar to a standard bipolar transistor, an IGBT has a saturation voltage when the device is fully turned on.
Input capacitance This is the capacitance for the gate of the device
Output capacitance This is the capacitance seen at the output of the IGBT.
Reverse transfer capacitance capacitance This is the capacitance between the gate and the collector terminals.
Transconductance This is defined as the ratio of a change in the collector current to the corresponding change in the gate-emitter voltage and it is measured in terms of conductance in Siemens.
Maximum junction temperature TJ °C This is the maximum temperature that the junction can withstand and it should be remembered that the junction will be above the package temperature and the external ambient temperature.

These are the main IGBT parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.

 

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Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.



Notes and supplementary information

 

  •   Availability & sources

The APT102GA60B2 is available from a number of stockists and electronic component distributors many of which are given in the table below.


APT102GA60B2 Component Distributor, Stock and Pricing

 


  •   Further details

The device features fast switching with low EMI, very low Eoff for maximum efficiency, ultra low Cres for improved noise immunity, low conduction loss, low gate charge, and increased intrinsic gate resistance for low EMI.

Typical applications for this device can include: ZVS phase shifted and other full bridge circuits, half bridge, high power PFC boost, welding, UPS, solar, and other inverters as well as high frequency, high efficiency industrial equipment.

Ian Poole   Written by Ian Poole .
  Experienced electronics engineer and author.




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