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IKWH30N67PR7 IGBT Data

Data for the IKWH30N67PR7 IGBT including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.

The IKWH30N67PR7 IGBT is described as a 670V 30A TRENCHSTOP IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage with improved EMI characteristics offering the best-in-class performance for high power and high switching frequency applications.



Key details and performance parameters for the IKWH30N67PR7 IGBT, insulated gate bipolar transistor.


IKWH30N67PR7 IGBT insulated gate bipolar transistor datasheet parameters & data
 
Parameters Details
Brief description Reverse conducting IGBT for PTFC control
Package type TO247
Collector-Emitter Voltage VCE 670V
Gate-emitter voltage VGES ±20V
Transient gate-emitter voltage VGEM ±30V
Maximum continuous collector current IC 71A at 25°C, 43A at 100°C
Maximum collector current pulsed ICM 90A
Power dissipation Ptot 179W at 225°C, 89W at 100°C
Gate-emitter threshold voltage VGE(th) 3.2V min, 3.95V typ, 4.8V max with Ic = 0.182A and VCE = VGE
Gate-emitter leakage current IGES 100nA max with VCE = 0V and VGE = 20V
Collector-emitter saturation voltage VCE(sat) 1.4V typ, 1.75V max at 25°C
1.7V typ at 175°C
Input capacitance 1906pF
Output capacitance 25.5pF typ
Reverse transfer capacitance capacitance 9.1pF
Transconductance 54.1S
Primary manufacturer Infineon

    Outlines & pinout:



Explanation of IGBT parameters


Parameter Explanation
Collector-Emitter Voltage VCES This is the absolute maximum operating voltage for the IGBT. It is often specified at a given temperature.
Gate-emitter voltage VGES This is te maximum operating voltage between the gate and emitter of the device.
Transient gate-emitter voltage VGEM This is the maximum gate emitter voltage that can be withstood for a short period - the time period of the pulse should be specified.
Maximum continuous collector current IC This is the maximum continuous current that the device can handle. This is normally specified for one or more temperatures.
Maximum collector current pulsed ICM This is the maximum current that cna be handled for a short period - the period of the pulse should also be specified.
Collector power dissipation PC This is the maximum power that can be dissipated by the collector - often a temperature is specified and often a derating as well for higher temperatures.
Collector-emitter breakdown voltage BVCES This is the voltage at which the device becomes liable to break down. It is greater or equal to the maximum operating voltage.
Gate-emitter threshold voltage VGE(th) This is the voltage at which the device starts to turn on.

Parameter Explanation
Gate-emitter leakage current IGES The leakage current into / out of the gate. Being a MOS-type device this is normally very low.
Collector-emitter saturation voltage VCE(sat) Similar to a standard bipolar transistor, an IGBT has a saturation voltage when the device is fully turned on.
Input capacitance This is the capacitance for the gate of the device
Output capacitance This is the capacitance seen at the output of the IGBT.
Reverse transfer capacitance capacitance This is the capacitance between the gate and the collector terminals.
Transconductance This is defined as the ratio of a change in the collector current to the corresponding change in the gate-emitter voltage and it is measured in terms of conductance in Siemens.
Maximum junction temperature TJ °C This is the maximum temperature that the junction can withstand and it should be remembered that the junction will be above the package temperature and the external ambient temperature.

These are the main IGBT parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.

 

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Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.



Notes and supplementary information

 

  •   Availability & sources

The IKWH30N67PR7 is available from a number of stockists and electronic component distributors many of which are given in the table below.


IKWH30N67PR7 Component Distributor, Stock and Pricing

 


  •   Further details

The device features capabilities including: stable temperature behaviour, low temperature dependence of VCEsat and Esw, 2 kV ESD HBM compliant, and easy parallel switching capability based on positive temperature coefficient of VCEsat

Ian Poole   Written by Ian Poole .
  Experienced electronics engineer and author.




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