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IXBT20N360HV IGBT Data

Data for the IXBT20N360HV 3600V 20A IGBT including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.

The IXBT20N360HV is described as a high voltage, high gain BIMOSFET monolithic bipolar MOS transistor, or IGBT.



Key details and performance parameters for the IXBT20N360HV IGBT, insulated gate bipolar transistor that is contained within a TO268 SMD package.


IXBT20N360HV IGBT insulated gate bipolar transistor datasheet parameters & data
 
Parameters Details
Brief description High voltage high gain, 3600V
Package type TO268
Collector-Emitter Voltage VCES 3600V
Gate-emitter voltage VGES ±20V
Transient gate-emitter voltage VGEM ±30V
Maximum continuous collector current IC 70A at 25°C, 20A at 110°C
Maximum collector current pulsed ICM 220A at 25°C for 1ms pulse
Collector power dissipation PC 430W at 25°C
Collector-emitter breakdown voltage BVCES 35600V min
Gate-emitter threshold voltage VGE(th) 3.0V min, 5.0V max for IC = 250µA and with VGE = VCE
Gate-emitter leakage current IGES ±100nA for VCE = 0V and VGE = ±20V
Collector-emitter saturation voltage VCE(sat) 2.9V typ, 3.4V max with IC = 20A and VGE = 15V at 25°C
Input capacitance 2045pF typ
Output capacitance 110pF typ
Reverse transfer capacitance capacitance 50pF typ
Maximum junction temperature TJ °C 150°C
Primary manufacturer IXYS

    Outlines & pinout:

 

IXBT20N360HV outline & pinout



Explanation of IGBT parameters


Parameter Explanation
Collector-Emitter Voltage VCES This is the absolute maximum operating voltage for the IGBT. It is often specified at a given temperature.
Gate-emitter voltage VGES This is te maximum operating voltage between the gate and emitter of the device.
Transient gate-emitter voltage VGEM This is the maximum gate emitter voltage that can be withstood for a short period - the time period of the pulse should be specified.
Maximum continuous collector current IC This is the maximum continuous current that the device can handle. This is normally specified for one or more temperatures.
Maximum collector current pulsed ICM This is the maximum current that cna be handled for a short period - the period of the pulse should also be specified.
Collector power dissipation PC This is the maximum power that can be dissipated by the collector - often a temperature is specified and often a derating as well for higher temperatures.
Collector-emitter breakdown voltage BVCES This is the voltage at which the device becomes liable to break down. It is greater or equal to the maximum operating voltage.
Gate-emitter threshold voltage VGE(th) This is the voltage at which the device starts to turn on.

Parameter Explanation
Gate-emitter leakage current IGES The leakage current into / out of the gate. Being a MOS-type device this is normally very low.
Collector-emitter saturation voltage VCE(sat) Similar to a standard bipolar transistor, an IGBT has a saturation voltage when the device is fully turned on.
Input capacitance This is the capacitance for the gate of the device
Output capacitance This is the capacitance seen at the output of the IGBT.
Reverse transfer capacitance capacitance This is the capacitance between the gate and the collector terminals.
Transconductance This is defined as the ratio of a change in the collector current to the corresponding change in the gate-emitter voltage and it is measured in terms of conductance in Siemens.
Maximum junction temperature TJ °C This is the maximum temperature that the junction can withstand and it should be remembered that the junction will be above the package temperature and the external ambient temperature.

These are the main IGBT parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.

 

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Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.



Notes and supplementary information

 

  •   Availability & sources

The IXBT20N360HV is available from a number of stockists and electronic component distributors many of which are given in the table below.


IXBT20N360HV Component Distributor, Stock and Pricing

 


  •   Further details

The IXBT20N360HV features a really high voltage capability along with low gate drive requirements and it provides a high power density and is contained within the low volume TO268 package.

Applications for this device might include switch mode and resonant mode power supplies, uninterruptible power supplies, laser generators, capacitor discharge circuits and AC switches.

The TO268 package is designed for very high power applications. Its significantly larger size and larger exposed metal pad (heat slug) compared to the TO263 provide a much lower thermal resistance, allowing it to dissipate more heat and handle higher currents.

The TO263 is also known as the D3PAK and it is the largest of the DPAK series; DPAK, D2PAK, D3PAK.

Ian Poole   Written by Ian Poole .
  Experienced electronics engineer and author.




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