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IXYA60N65A5 650V 60A IGBT Data

Data for the IXYA60N65A5 650V 60A IGBT including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.

The IXYA60N65A5 was developed using the proprietary XPT thin-wafer technology and state-of-the-art Trench IGBT process. This device features reduced thermal resistance, low conduction losses, and low gate driver requirements.



Key details and performance parameters for the IXYA60N65A5 IGBT, insulated gate bipolar transistor.


IXYA60N65A5 IGBT insulated gate bipolar transistor datasheet parameters & data
 
Parameters Details
Brief description 650V 60A up to 5kHz switching
Package type TO263
Collector-Emitter Voltage VCES 650V
Gate-emitter voltage VGES ±20V
Transient gate-emitter voltage VGEM ±30V
Maximum continuous collector current IC 134A at 25°C, 60A at 110°C
Maximum collector current pulsed ICM 260A at 25°C for 1ms
Collector power dissipation PC 395W at 25°C
Gate-emitter threshold voltage VGE(th) 3.7V min, 5.8V max for IC = 250µA and VCE = VGE
Gate-emitter leakage current IGES ±100µA for VCE = 0V and VGE = ±20V
Collector-emitter saturation voltage VCE(sat) 1.23V typ, 1.35V max for IC = 36A and VGE = 15V
1.35V typ for IC = 36A and VGE = 15V at 150°C
Input capacitance 1970pF typ
Output capacitance 106pF typ
Reverse transfer capacitance capacitance 80pF typ
Maximum junction temperature TJ °C 175°C
Primary manufacturer Littlefuse / IXYS

    Outlines & pinout:

 

IXYA60N65A5 outline & pinout



Explanation of IGBT parameters


Parameter Explanation
Collector-Emitter Voltage VCES This is the absolute maximum operating voltage for the IGBT. It is often specified at a given temperature.
Gate-emitter voltage VGES This is te maximum operating voltage between the gate and emitter of the device.
Transient gate-emitter voltage VGEM This is the maximum gate emitter voltage that can be withstood for a short period - the time period of the pulse should be specified.
Maximum continuous collector current IC This is the maximum continuous current that the device can handle. This is normally specified for one or more temperatures.
Maximum collector current pulsed ICM This is the maximum current that cna be handled for a short period - the period of the pulse should also be specified.
Collector power dissipation PC This is the maximum power that can be dissipated by the collector - often a temperature is specified and often a derating as well for higher temperatures.
Collector-emitter breakdown voltage BVCES This is the voltage at which the device becomes liable to break down. It is greater or equal to the maximum operating voltage.
Gate-emitter threshold voltage VGE(th) This is the voltage at which the device starts to turn on.

Parameter Explanation
Gate-emitter leakage current IGES The leakage current into / out of the gate. Being a MOS-type device this is normally very low.
Collector-emitter saturation voltage VCE(sat) Similar to a standard bipolar transistor, an IGBT has a saturation voltage when the device is fully turned on.
Input capacitance This is the capacitance for the gate of the device
Output capacitance This is the capacitance seen at the output of the IGBT.
Reverse transfer capacitance capacitance This is the capacitance between the gate and the collector terminals.
Transconductance This is defined as the ratio of a change in the collector current to the corresponding change in the gate-emitter voltage and it is measured in terms of conductance in Siemens.
Maximum junction temperature TJ °C This is the maximum temperature that the junction can withstand and it should be remembered that the junction will be above the package temperature and the external ambient temperature.

These are the main IGBT parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.

 

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Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.



Notes and supplementary information

 

  •   Availability & sources

The IXYA60N65A5 is available from a number of stockists and electronic component distributors many of which are given in the table below.


IXYA60N65A5 Component Distributor, Stock and Pricing

 


  •   Further details

The device can be used in many applications but it is focused in use within power inverters, uninterruptible power supplies UPS, power factor correction circuits, battery chargers, welding machines, lamp ballasts and inrush protection circuits.

Ian Poole   Written by Ian Poole .
  Experienced electronics engineer and author.




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