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2N7000 MOSFET Data

Data for the 2N7000 MOSFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.

The 2N7000 has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.

The device can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A and it is particularly suited for low-voltage, low-current circuits.

A lineup of field effect transistors - 2N7000 N-channel MOSFET - these are leaded electronic components, although many are available as surface mount devices — 2N7000 field effect transistors

Key details and performance parameters for the 2N7000 MOSFET.

2N7000 MOSFET datasheet parameters & data
Parameters	Details
Brief description	Small signal MOSFET
Package type	T092
Operational mode	Enhancement
Channel type	N-channel
Drain to Source voltage V_DSS	60V
Drain to gate voltage V_DGR	60V
Gate to source voltage V_GSS	±20V continuous, ±40V non-repetitive < 50ms
Maximum drain current continuous I_D	200mA
Maximum drain current pulsed I_D	500mA
Zero gate voltage drain current I_DSS	1µA
Gate threshold voltage V_GS(th)	0.8 min, 2.1typ, 3V max
Static drain source ON resistance R_DS(ON)	1.2Ω typ, 5Ω max for VDS 10V, ID 500mA
Drain source ON voltage V_DS(ON)	0.6V typ, 2.5V max for VDS 10V, ID 500mA
Forward transconductance g_FS	100min, 320 typ
Input capacitance	20pF typical, 50pGF max at VDS=25V & VGS=0V
Output capacitance	11pF typ, 25pF max at VDS=25V & VGS=0V
T_J °C	150
P_TOT mW	400mW

Outlines & pinout:

Explanation of MOSFET parameters

Parameter	Explanation
Operational mode	This details whether the FET is an enhancement or depletion mode
Channel type	The channel of the MOSFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier.
Drain to Source voltage V_DSS	This is the maximum voltage that can be sustained between the drain and source
Gate to source voltage V_GSS	This is the maximum voltage that can be sustained between the drain and the gate.
Maximum drain current continuous I_D	This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values

Parameter	Explanation
Zero gate voltage drain current I_DSS	This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this.
Gate threshold voltage V_GS(th)	This is the minimum gate-to-source voltage, V_GS required to create a conductive channel between the source and drain terminals
Static drain source ON resistance R_DS(ON)	This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this.
Drain source ON voltage V_DS(ON)	This is the voltage across the device when it is turned on. Again the test conditions are given.
Forward transconductance g_FS	Forward transconductance also given the letters g_m is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔV_GS, with the drain-source voltage, V_DS held constant.

These are the main MOSFET parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.

Read more about . . . . FET Specifications & Parameters.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The 2N7000 is available from a number of stockists and electronic component distributors many of which are given in the table below.

2N7000 Component Distributor, Stock and Pricing

• Further details

This small signal MOSFET is widely available from a number of manufacturers including ON Semiconductor, Microchip and Vishay as well as a number of others.

• Notable features

The 2N7000 is an N-channel enhancement-mode vertical DMOS field-effect transistor designed for low-voltage, low-current switching and amplification, particularly suited for logic-level drive from CMOS/TTL circuits.

Low Threshold Voltage : VGS(th) typically 2.1 V (max 3 V), allowing direct drive from 5 V logic signals without level shifting.
High Drain-Source Voltage : VDS max of 60 V, supporting applications up to 48 V systems.
Low On-Resistance : RDS(on) max 5 Ω at VGS=10 V, minimizing power losses in switching.
Medium Current Handling : Continuous drain current ID of 200 mA (350 mA pulsed), ideal for small loads.
Low Gate Charge : Qg typical 8 nC, enabling fast switching speeds up to 300 MHz.
Compact Packaging : Available in TO-92 or SOT-23, with 400 mW power dissipation for space-constrained designs.
Rugged Construction : Avalanche-rated with ESD protection up to 2 kV HBM, enhancing reliability.
Wide Temperature Range : Operates from -55°C to +150°C, suitable for industrial environments.

• Typical applications summary

Application Category	Typical Use Case	Device Feature Utilised
Logic Level Switching	CMOS/TTL gate drivers and interface circuits.	Low VGS(th) (2.1 V typ) for direct 5 V logic drive.
Power MOSFET Drivers	Gate drivers for larger power MOSFETs in converters.	Low Qg (8 nC) and fast switching for efficient control.
Load Switching	Relay, solenoid, and LED drivers in low-power systems.	200 mA ID and low RDS(on) (5 Ω max) for minimal losses.
Signal Amplification	Small-signal amplifiers in sensors and audio circuits.	High fT (300 MHz) and linear operation in enhancement mode.
Servo Motor Control	Low-current drive in RC servos and actuators.	60 V VDS and rugged DMOS structure for reliable operation.