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2N7002 SMD MOSFET Data
Data for the 2N7002 MOSFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.
The 2N7002 has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.
The device can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A and it is particularly suited for low-voltage, low-current circuits.
Key details and performance parameters for the 2N7002 MOSFET.
| 2N7002 MOSFET datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Brief description | Small signal MOSFET |
| Package type | SOT23 |
| Operational mode | Enhancement |
| Channel type | N-channel |
| Drain to Source voltage VDSS | 60V |
| Drain to gate voltage VDGR | 60V |
| Gate to source voltage VGSS | ±20V continuous, ±40V non-repetitive < 50ms |
| Maximum drain current continuous ID | 115mA |
| Maximum drain current pulsed ID | 800mA |
| Zero gate voltage drain current IDSS | 1µA |
| Gate threshold voltage VGS(th) | 1.0 min, 2.1typ, 2.5V max |
| Static drain source ON resistance RDS(ON) | 1.2Ω typ, 7.5Ω max for VDS 10V, ID 500mA |
| Drain source ON voltage VDS(ON) | 0.6V typ, 3.75V max for VDS 10V, ID 500mA |
| Forward transconductance gFS | 80min, 320 typ |
| Input capacitance | 20pF typical, 50pGF max at VDS=25V & VGS=0V |
| Output capacitance | 11pF typ, 25pF max at VDS=25V & VGS=0V |
| TJ °C | 150 |
| PTOT mW | 200mW |
Outlines & pinout:
Explanation of MOSFET parameters
| Parameter | Explanation |
|---|---|
| Operational mode | This details whether the FET is an enhancement or depletion mode |
| Channel type | The channel of the MOSFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier. |
| Drain to Source voltage VDSS | This is the maximum voltage that can be sustained between the drain and source |
| Gate to source voltage VGSS | This is the maximum voltage that can be sustained between the drain and the gate. |
| Maximum drain current continuous ID | This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values |
| Parameter | Explanation |
|---|---|
| Zero gate voltage drain current IDSS | This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this. |
| Gate threshold voltage VGS(th) | This is the minimum gate-to-source voltage, VGS required to create a conductive channel between the source and drain terminals |
| Static drain source ON resistance RDS(ON) | This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this. |
| Drain source ON voltage VDS(ON) | This is the voltage across the device when it is turned on. Again the test conditions are given. |
| Forward transconductance gFS | Forward transconductance also given the letters gm is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔVGS, with the drain-source voltage, VDS held constant. |
These are the main MOSFET parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The 2N7002 is available from a number of stockists and electronic component distributors many of which are given in the table below.
2N7002 Component Distributor, Stock and Pricing
• Further details
This small signal MOSFET is widely available from a number of manufacturers including ON Semiconductor, Microchip and Vishay as well as a number of others.
Being a surface mount version of the device it is used in very large quantities.
Written by Ian Poole .
Experienced electronics engineer and author.
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