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3SK294 Dual Gate RF MOSFET Data
Data for the 3SK294 dual gate RF MOSFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.
The 3SK294 is a silicon dual gate MOSFET intended for use in TV tuners and VHF RF amplifiers.
The device is now not recommended for new designs, NRFD, so it is suggested that it is only used for existing designs and last time buys instigated for any existing production.
Key details and performance parameters for the 3SK294 MOSFET.
| 3SK294 MOSFET datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Brief description | Silicon N-Channel Dual Gate MOSFET |
| Package type | SOT-343 |
| Operational mode | Enhancement |
| Channel type | N-channel |
| Drain to Source voltage VDS | 12.5 |
| Gate 1 to source voltage VG1S | ±8V |
| Gate 2 to source voltage VG2S | ±8V |
| Maximum drain current continuous ID | 30mA |
| Zero gate voltage drain current IDSS | |
| Gate 1 source cutoff voltage VG1S(off) | 0.3V min, 0.9 typ, 1.3V max |
| Gate 2 source cutoff voltage VG2S(off) | 0.5V min, 1.0 typ, 1.5V max |
| Forward transfer admittance FFS | 19.5 min, 23.5 typ |
| Input capacitance | 2.5pF typ, 3.1pF max |
| Power gain | 23.5dB min, 26dB typ |
| Noise figure | 1.4dB typ, 2.5dB max |
| TJ °C | 125 |
| PTOT mW | 100mW |
Outlines & pinout:
Explanation of MOSFET parameters
| Parameter | Explanation |
|---|---|
| Operational mode | This details whether the FET is an enhancement or depletion mode |
| Channel type | The channel of the MOSFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier. |
| Drain to Source voltage VDSS | This is the maximum voltage that can be sustained between the drain and source |
| Gate to source voltage VGSS | This is the maximum voltage that can be sustained between the drain and the gate. |
| Maximum drain current continuous ID | This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values |
| Parameter | Explanation |
|---|---|
| Zero gate voltage drain current IDSS | This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this. |
| Gate threshold voltage VGS(th) | This is the minimum gate-to-source voltage, VGS required to create a conductive channel between the source and drain terminals |
| Static drain source ON resistance RDS(ON) | This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this. |
| Drain source ON voltage VDS(ON) | This is the voltage across the device when it is turned on. Again the test conditions are given. |
| Forward transconductance gFS | Forward transconductance also given the letters gm is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔVGS, with the drain-source voltage, VDS held constant. |
These are the main MOSFET parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The 3SK294 is available from a number of stockists and electronic component distributors many of which are given in the table below.
3SK294 Component Distributor, Stock and Pricing
• Further details
Although the device is included here, it is now not recommended for new designs although some distributors still hold stocks for the time being.
The device offers good cross modulation performance and a low reverse transfer capacitance: Crss = 20 fF (typ.)
Written by Ian Poole .
Experienced electronics engineer and author.
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