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BSS123 Small Signal MOSFET
Data for the BSS123 small signal MOSFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.
The BSS123 is a widely used small signal MOSFET that comes in an SOT23 package.
The device is an N-channel enhancement mode MOSFET that is compatible with 4.5V logic levels.Key details and performance parameters for the BSS123 MOSFET.
| BSS123 MOSFET datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Brief description | Small signal 100V MOSFET |
| Package type | SOT23 |
| Operational mode | Enhancement |
| Channel type | N-channel |
| Drain to Source voltage VDS | 100V |
| Drain to Source breakdown voltage V(BR)DSS) | 100V min |
| Gate to source voltage VGS | -20V to +20V |
| Maximum drain current continuous ID | 0.19A |
| Maximum drain current pulsed ID | 0.77A @ 25°C |
| Gate threshold voltage VGS(th) | 0.8V min, 1.4V typ, 1.8V max |
| Static drain source ON resistance RDS(ON) | 2.4Ω typ, 6Ω max at 10V & 0.19A 2.7Ω typ, 10Ω max at 4.5V & 0.15A |
| Forward transconductance gFS | 0.41 typ |
| Input capacitance | 15pF typ |
| Output capacitance | 2.5pF |
| Reverse transfer capacitance | 1.6pF |
| TJ °C | |
| PTOT | 0.5W |
| Primary manufacturer | Infineon |
Outlines & pinout:
Explanation of MOSFET parameters
| Parameter | Explanation |
|---|---|
| Operational mode | This details whether the FET is an enhancement or depletion mode |
| Channel type | The channel of the MOSFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier. |
| Drain to Source voltage VDSS | This is the maximum voltage that can be sustained between the drain and source |
| Gate to source voltage VGSS | This is the maximum voltage that can be sustained between the drain and the gate. |
| Maximum drain current continuous ID | This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values |
| Parameter | Explanation |
|---|---|
| Zero gate voltage drain current IDSS | This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this. |
| Gate threshold voltage VGS(th) | This is the minimum gate-to-source voltage, VGS required to create a conductive channel between the source and drain terminals |
| Static drain source ON resistance RDS(ON) | This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this. |
| Drain source ON voltage VDS(ON) | This is the voltage across the device when it is turned on. Again the test conditions are given. |
| Forward transconductance gFS | Forward transconductance also given the letters gm is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔVGS, with the drain-source voltage, VDS held constant. |
These are the main MOSFET parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The BSS123 is available from a number of stockists and electronic component distributors many of which are given in the table below.
BSS123 Component Distributor, Stock and Pricing
• Further details
the BSS123 is a widely used and widely available device that can be obtained at a good price from a variety of different distributors with the primary manufacturer being Infineon.
Written by Ian Poole .
Experienced electronics engineer and author.
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