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BSS127 Small Signal MOSFET
Data for the BSS127 small signal MOSFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.
The BSS127 is a SIPMOS small signal MOSFET which possesses a high drain-source breakdown voltage, VDS, typically rated at 600V.
This makes it suitable for switching or controlling high-voltage signals and loads where standard low-voltage MOSFETs would fail.
Key details and performance parameters for the BSS127 MOSFET.
| BSS127 MOSFET datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Brief description | Small signal 100V MOSFET |
| Package type | SOT23 |
| Operational mode | Enhancement |
| Channel type | N-channel |
| Drain to Source voltage VDS | 600V |
| Drain to Source breakdown voltage V(BR)DSS) | 600V min |
| Gate to source voltage VGS | ±20V |
| Maximum drain current continuous ID | 21mA at 25°C, 17mA at 70°C |
| Maximum drain current pulsed ID | 90mA @ 25°C |
| Gate threshold voltage VGS(th) | 1.4V min, 2.0V typ, 2.6V max |
| Static drain source ON resistance RDS(ON) | 330Ω typ, 600Ω max at 4.5V & 0.016A & 3100Ω typ, 500Ω max at 10V & 0.016A & |
| Forward transconductance gFS | 0.007 min, 0.015 typ |
| Input capacitance | 21pF typ, 28pF max |
| Output capacitance | 2.4pF typand 3pF max |
| Reverse transfer capacitance | 1.0pF typ, 1.5pF maxpF |
| TJ °C | 150 |
| PTOT | 0.50W |
| Primary manufacturer | Infineon |
Outlines & pinout:
Explanation of MOSFET parameters
| Parameter | Explanation |
|---|---|
| Operational mode | This details whether the FET is an enhancement or depletion mode |
| Channel type | The channel of the MOSFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier. |
| Drain to Source voltage VDSS | This is the maximum voltage that can be sustained between the drain and source |
| Gate to source voltage VGSS | This is the maximum voltage that can be sustained between the drain and the gate. |
| Maximum drain current continuous ID | This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values |
| Parameter | Explanation |
|---|---|
| Zero gate voltage drain current IDSS | This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this. |
| Gate threshold voltage VGS(th) | This is the minimum gate-to-source voltage, VGS required to create a conductive channel between the source and drain terminals |
| Static drain source ON resistance RDS(ON) | This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this. |
| Drain source ON voltage VDS(ON) | This is the voltage across the device when it is turned on. Again the test conditions are given. |
| Forward transconductance gFS | Forward transconductance also given the letters gm is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔVGS, with the drain-source voltage, VDS held constant. |
These are the main MOSFET parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The BSS127 is available from a number of stockists and electronic component distributors many of which are given in the table below.
BSS127 Component Distributor, Stock and Pricing
• Further details
The BSS127 characteristics lend it to a wide number of different circuit applications:
Level Shifting: Due to its ability to handle high voltages, it can be employed in level shifting circuits to interface between low-voltage logic and high-voltage circuits.
Small Signal Amplification: As a MOSFET, it can be used in small-signal amplifier stages, particularly where a high input impedance is desired.
Linear Voltage Regulators (LDOs): In some designs, it can be used as a pass transistor in linear voltage regulators due to its controllable current characteristics.
AC-DC LED Drivers: Its high voltage rating makes it suitable for certain parts of AC-DC LED driver circuits.
Automotive Applications: Some versions are AEC-Q101 qualified, making them suitable for specific automotive applications, particularly in high-voltage battery management systems (BMS).
Battery Management Systems (BMS): Used in high-voltage sections of BMS for switching or protection functions.
Load Switch: Can be used as a simple electronic switch to control power to a load.
Written by Ian Poole .
Experienced electronics engineer and author.
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