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IPA082N10NF2S MOSFET Data

Data for the IPA082N10NF2S power MOSFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.

The IPA082N10NF2S is one of Infineon's StrongIRFET series of power transistors offering a high level of performance and a maximum voltage of 100V and current of 46A.

Key details and performance parameters for the IPA082N10NF2S MOSFET.

IPA082N10NF2S power MOSFET datasheet parameters & data
Parameters	Details
Brief description	100V 46A power MOSFET
Package type	TO220
Operational mode	Enhancement
Channel type	N channel
Drain to Source voltage V_DSS	100V
Gate to source voltage V_GS	-20V to +20V
Maximum drain current continuous I_D	46A
Maximum drain current pulsed I_D	184A
Zero gate voltage drain current I_DSS	0.1µA typ, 1.0µA max for VDS = 100V, VGS = 0V at 25° C 10µA typ, 100µA max for VDS = 100V, VGS = 0V at 125° C
Gate threshold voltage V_GS(th)	2.2V min, 3.0V typ, 3.8V max with VDS = VGS and ID = 46A
Static drain source ON resistance R_DS(ON)	7.3mΩ typ, 8.2Ω max for VGS = 10V and ID = 30A 8.9mΩ typ, 10.3Ω max for VGS = 16V and ID = 15A
Forward transconductance g_FS	31 min
Input capacitance	2000pF typ
Output capacitance	320pF typ
T_J °C	15pF typ
P_TOT mW	35W
Primary manufacturer	Infineon

Outlines & pinout:

Explanation of MOSFET parameters

Parameter	Explanation
Operational mode	This details whether the FET is an enhancement or depletion mode
Channel type	The channel of the MOSFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier.
Drain to Source voltage V_DSS	This is the maximum voltage that can be sustained between the drain and source
Gate to source voltage V_GSS	This is the maximum voltage that can be sustained between the drain and the gate.
Maximum drain current continuous I_D	This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values

Parameter	Explanation
Zero gate voltage drain current I_DSS	This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this.
Gate threshold voltage V_GS(th)	This is the minimum gate-to-source voltage, V_GS required to create a conductive channel between the source and drain terminals
Static drain source ON resistance R_DS(ON)	This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this.
Drain source ON voltage V_DS(ON)	This is the voltage across the device when it is turned on. Again the test conditions are given.
Forward transconductance g_FS	Forward transconductance also given the letters g_m is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔV_GS, with the drain-source voltage, V_DS held constant.

These are the main MOSFET parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.

Read more about . . . . FET Specifications & Parameters.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The IPA082N10NF2S is available from a number of stockists and electronic component distributors many of which are given in the table below.

IPA082N10NF2S Component Distributor, Stock and Pricing

• Further details

The IPA082N10NF2S has been optimised for a wide variety of circuit applications and it has been 100% avalanche tested to ensure the correct eprformance.