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PSMN9R8-100YSF 100 V, 10.2 mΩ N-channel MOSFET Data
Data for the PSMN9R8-100YSF 100 V, 10.2 mΩ N-channel MOSFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.
The PSMN9R8-100YSF MOSFET is a NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.
Key details and performance parameters for the PSMN9R8-100YSF MOSFET.
| PSMN9R8-100YSF MOSFET datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Brief description | NextPower 100 V, 10.2 mΩ N-channel |
| Package type | SOT669 |
| Operational mode | Enhancement |
| Channel type | N-channel |
| Drain to Source voltage VDSS | 100V |
| Drain to gate voltage VDGR | 100V for temperatures between 25°C & 175°C; |
| Maximum drain current continuous ID | 80A with VGS = 10V at 25°C |
| Maximum drain current peak ID | 320A for ≤10µs at 25°C |
| Zero gate voltage drain current IDSS | 0.01µA typ, 1µA max for VDS = 100V VGDS = 0V at 25°C 5µA typ, 100µA max for VDS = 100V VGDS = 0V at 125°C |
| Gate threshold voltage VGS(th) | 2V min, 3V typ, 4V max for ID = 1mA, VDS = VGS at 25°C |
| Static drain source ON resistance RDS(ON) | 8.35mΩ typ, 10.2mΩ max for VGS=10V ID = 20A at 25°C |
| Input capacitance | 14508pF min, 2417pF typ, 3384pF max |
| Output capacitance | 347pF min, 579pF typ, 926pF max |
| Transfer reverse capacitance | 2pF min, 20pF max, 52pF max |
| TJ °C | 175 |
| PTOT mW | 147mW |
| Primary manufacturer | Nexperia |
Outlines & pinout:
Explanation of MOSFET parameters
| Parameter | Explanation |
|---|---|
| Operational mode | This details whether the FET is an enhancement or depletion mode |
| Channel type | The channel of the MOSFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier. |
| Drain to Source voltage VDSS | This is the maximum voltage that can be sustained between the drain and source |
| Gate to source voltage VGSS | This is the maximum voltage that can be sustained between the drain and the gate. |
| Maximum drain current continuous ID | This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values |
| Parameter | Explanation |
|---|---|
| Zero gate voltage drain current IDSS | This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this. |
| Gate threshold voltage VGS(th) | This is the minimum gate-to-source voltage, VGS required to create a conductive channel between the source and drain terminals |
| Static drain source ON resistance RDS(ON) | This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this. |
| Drain source ON voltage VDS(ON) | This is the voltage across the device when it is turned on. Again the test conditions are given. |
| Forward transconductance gFS | Forward transconductance also given the letters gm is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔVGS, with the drain-source voltage, VDS held constant. |
These are the main MOSFET parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The PSMN9R8-100YSF is available from a number of stockists and electronic component distributors many of which are given in the table below.
PSMN9R8-100YSF Component Distributor, Stock and Pricing
• Further details
The PSMN9R8-100YSF NextPower MOSFET is suitable for many circuit designs including: synchronous rectifiers in AC-DC and DC-DC converters, primary side switch in DC-DC converters, brushless DC (BLDC) motor controls, USB Power Delivery adapters, full-bridge and half-bridge applications, flyback and resonant topologies, and a variety of other circuit designs.
Written by Ian Poole .
Experienced electronics engineer and author.
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