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TK024N60Z1 MOSFET Data
Data for the TK024N60Z1 MOSFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.
The TK024N60Z1 is a 600V MOSFET with a 24mΩ ON resistance. It is intended for use in servers, data centres, switch mode power supplies for industrial equipment and power conditioners for photovoltaic generators.
The device has a very low RDS(ON) of 0.024Ω maximum which means that it is very effective in any switching application.
Key details and performance parameters for the TK024N60Z1 MOSFET.
| TK024N60Z1 MOSFET datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Brief description | 600V MOSFET with 0.24mΩ ON resistance |
| Package type | TO247 |
| Operational mode | Enhancement mode |
| Channel type | N channel |
| Drain to Source voltage VDSS | 600V |
| Gate to source voltage VGSS | ±30V |
| Maximum drain current continuous ID | 80A |
| Maximum drain current pulsed ID | 320A |
| Zero gate voltage drain current IDSS | |
| Gate threshold voltage VGS(th) | 3V min, 4V max with VDS=10V, ID = 3.84mA |
| Static drain source ON resistance RDS(ON) | 0.02Ω typ, 0.024Ω max at VGS=10V and ID=30A |
| Forward transconductance gFS | |
| Input capacitance | 8420pF typ |
| Output capacitance | 190pF typ |
| TJ °C | 150 |
| PTOT | 506W |
| Primary manufacturer | Toshiba |
Outlines & pinout:
Explanation of MOSFET parameters
| Parameter | Explanation |
|---|---|
| Operational mode | This details whether the FET is an enhancement or depletion mode |
| Channel type | The channel of the MOSFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier. |
| Drain to Source voltage VDSS | This is the maximum voltage that can be sustained between the drain and source |
| Gate to source voltage VGSS | This is the maximum voltage that can be sustained between the drain and the gate. |
| Maximum drain current continuous ID | This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values |
| Parameter | Explanation |
|---|---|
| Zero gate voltage drain current IDSS | This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this. |
| Gate threshold voltage VGS(th) | This is the minimum gate-to-source voltage, VGS required to create a conductive channel between the source and drain terminals |
| Static drain source ON resistance RDS(ON) | This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this. |
| Drain source ON voltage VDS(ON) | This is the voltage across the device when it is turned on. Again the test conditions are given. |
| Forward transconductance gFS | Forward transconductance also given the letters gm is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔVGS, with the drain-source voltage, VDS held constant. |
These are the main MOSFET parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The TK024N60Z1 is available from a number of stockists and electronic component distributors many of which are given in the table below.
TK024N60Z1 Component Distributor, Stock and Pricing
• Further details
The TK024N60Z1 silicon N-channel enhancement MOSFET offers a very low on resistance of better than 0.024Ω along with high speed switching and low capacitance for its capabilities.
This makes the device ideal for use in a variety of circuits and in particular for switching power supplies.
Written by Ian Poole .
Experienced electronics engineer and author.
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