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ES1M Fast Recovery PN Junction Diode Data
Key data for the ES1M 1kV fast recovery semiconductor diode including key electrical parameters, performance, features, outline, package type and many other key datasheet details.
Key details and performance parameters for the ES1M diode.
ES1M diode datasheet parameters & data |
|
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Parameters | Details |
Diode type | Surface mount superfast rectifier |
Package type | DO214 (also known as SMA 403) |
Repetitive peak reverse voltage, VRRM | 1000V |
Working peak reverse voltage, VRWM | 1000V |
DC blocking voltage, VR | 1000V |
RMS reverse voltage, VR(RMS) | 700V |
Forward continuous current, IF | 1A |
Non-repetitive forward surge current, IFSM | 30A half sine wave 8.3ms |
Maximum reverse current IR | 5.0µA at 25°C and 50 0r 100µA at 100°C at the rated voltage specification depends on manufacturer. |
Junction temperature (°C) | -50 - +150°C |
Forward voltage VF | 1.7V @ 1A |
Diode junction capacitance CD | 7.0pF at VR = 4V |
Reverse recovery time (Trr) | typically 75ns |
Outline & pinout:
Explanation of major diode parameters
Parameter | Explanation |
---|---|
Repetitive peak reverse voltage, VRRM | This is the maximum value of the short period peak reverse voltage that can be sustained. |
Working peak reverse voltage, VRWM | This is the maximum value of the continuous reverse voltage that can be applied to the diode. |
DC blocking voltage, VR | This is the maximum reverse DC voltage that should be applied across the diode. |
RMS reverse voltage, VR(RMS) | As many AC waveforms are quoted in RMS, this is the maximum reverse voltage that can be sustained where the voltage is expressed in terms of its RMS value. |
Forward continuous current, IF | This is the maximum forward current that can be sustained by the diode. |
Average rectified current, IF | This is the maximum average current value that can be handled by the diode. The parameter often states the load as this will affect the operation of the diode. |
Non-repetitive forward surge current, IFSM | This is the maximum surge current that can be handled - it should only be present for a short time. |
Parameter | Explanation |
---|---|
Power dissipation, PTOT | The maximum power dissipation that can be sustained within the device. |
Junction temperature (°C) | This is the maximum temperature of the PN junction that can be sustained. Remember that the junction temperature can be much higher than the ambient temperature of the equipment. |
Forward voltage VF | This parameter gives the forward voltage drop for a particular current passed through the diode. |
Breakdown voltage VBR | This is the minimum voltage at which the diode may breakdown. If the current is not limited it will lead to the destruction of the device. |
Leakage current IR | This is the current that flows under stated conditions when the diode is reverse biassed. |
Diode capacitance CD | The diode capacitance, CD may also be referred to as the junction capacitance, CJ. All diodes have a certain capacitance across the PN junction. The value will be stated for a given reverse voltage. |
Reverse recovery time | If a diode is initially driven in forward bias, and the polarity suddenly switches to reverse bias, the diode will still remain conducting for some time. The reverse recovery time is the time required for conduction to settle into the reverse bias state. |
These are the main diode parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the diode.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The ES1M is available from a number of stockists and electronic component distributors many of which are given in the table below.
ES1M Component Distributor, Stock and Pricing
• Notable features
The ES1J is a surface-mount, super-fast recovery rectifier diode specifically designed for use in high-frequency applications where efficiency and compact size are critical.
Super-Fast Reverse Recovery Time (trr): The diode typically features a maximum reverse recovery time of 75 nanoseconds (ns) for this high voltage version of the ES1 diode, which is crucial for minimizing switching losses in high-speed circuits.
High Reverse Voltage Rating: The ES1J has a maximum Repetitive Peak Reverse Voltage (VRRM) of 600V, making it suitable for rectification in high-voltage AC/DC conversion stages.
Average Forward Current: The device can handle an Average Rectified Output Current (IF) of 1.0 Ampere (A), making it ideal for low to moderate power density applications.
Surface Mount Package: It is enclosed in the DO-214AC (SMA) package, which is a small, low-profile surface-mount package perfect for automated assembly and space-constrained PCB designs.
High Surge Capability: It typically features a high Non-repetitive Peak Forward Surge Current (IFSM) of 30A, providing robust protection against transient overcurrent events. This figure is very high considering the device is a small surface mount electronic component.
• Typical applications summary
Application Category | Typical Use Case | Device Feature Utilised |
---|---|---|
Switch-Mode Power Supplies (SMPS) | Output rectification stage for secondary windings or flyback diode in low-power converters and adaptors. | Super-Fast trr (75ns typically for this high voltage version) minimizes power loss at high switching frequencies. |
High-Frequency Inverters/Converters | Free-wheeling or damper diodes in circuits like fluorescent lamp ballasts and low-power motor drives. | High VRRM (600V) and fast recovery speed. |
LED Lighting Drivers | Rectification in compact, high-efficiency AC/DC LED drivers where space is limited (e.g., in light bulbs). | Small SMA (DO-214AC) package and high efficiency. |
Telecommunication Equipment | Power supply sections requiring fast, reliable rectification and clamping diodes in dense communication gear. | A balance of IF (1A) and VRRM (600V) in a compact, robust package. |
• Diodes in ES1 Series
Part Number | VRRM (Maximum Repetitive Peak Reverse Voltage) | VRMS (Maximum RMS Voltage) |
---|---|---|
ES1A | 50 V | 35 V |
ES1B | 100 V | 70 V |
ES1C | 150 V | 105 V |
ES1D | 200 V | 140 V |
ES1E | 300 V | 210 V |
ES1G | 400 V | 280 V |
ES1M | 600 V | 420 V |
ES1K | 800 V | 560 V |
ES1M | 1000 V | 700 V |
Written by Ian Poole .
Experienced electronics engineer and author.
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