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BC848 SMD Transistor Data

Key transistor data for the BC848 NPN general purpose and switching transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.

The BC848 is a general purpose transistor housed within an SOT23 surface mount, SMD package. Some datasheets also describe this device as being for switching and general purpose applications.

Key datasheet details and performance parameters for the BC848 transistor.

nnn transistor datasheet parameters & data
Parameters	Details
Transistor type	NPN general purpose
Package type	SOT23
Transistor SMD Ident**	8CB & 8CC
V_CBO max (V)	30
V_CEO max (V)	30
V_EBOmax (V)	5
I_C max (mA)	100
T_J Max °C	150
P_TOT mW	310
f_T min (MHz)	300
C_OB	3.5pF typical 6.0 max
h_fe	see below
I_C for h_fe
Similar / equivalents

Outline & pinout:

** Transistor SMD identification: In view of the fact that it is not possible to fully mark surface mount transistors with their full part number a short form identification or marking is added to the package.

This is typically a three character identification. For the BC850 this is either 8EA or 8EC.

Explanation of transistor parameters

Parameter	Explanation
V_CBO Max	Maximum collector-base voltage with emitter open circuit .
V_CEO Max	Maximum collector-emitter voltage with base open circuit.
V_EBO Max	Maximum emitter-base voltage with collector open circuit.
V_CEsat (included where applicable)	The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch).
I_C Max	Maximum collector current.

Parameter	Explanation
T_J	Maximum junction temperature.
P_TOT Max	Maximum device dissipation normally in free air at 25°C unless other conditions indicated.
f_T Min	Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity.
C_OB Max	Maximum collector capacitane, normally measured with emitter open circuit.
h_FE	DC current gain for H_FE at I_C. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.]
P_TOT Max	Maximum device dissipation normally in free air at 25°C unless other conditions indicated.

These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

Read more about . . . . Transistor Data-sheet Specifications & Parameters.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

The BC848 is a popular surface mount NPN silicon transistor in a surface mount SOT23 package.

• Availability & sources

The device is available from a number of stockists and electronic component distributors.

• hFE for variants

The BC848 has three variants according to the gain, A: 110 - 220, B: 200 - 450, C: 420 - 800.

The suffixes A, B or C are added to the overall part number so that the required selection can be made.

• Notable features

The BC848 is a highly popular, general-purpose NPN bipolar junction transistor (BJT) known for its versatility, small size, and excellent performance in low-power signal processing applications.

Surface Mount Package (SOT-23): The BC848 is manufactured in the tiny SOT-23 surface-mount device (SMD) package , making it ideal for compact, high-density printed circuit boards (PCBs) common in modern consumer electronics.
High Current Gain (hFE): It offers a high DC current gain (typically hFE values ranging from 110 to 800 depending on the specific group: BC848A, B, or C), providing excellent amplification for weak signals.
Low Current/Voltage Rating: It is designed for small-signal applications, featuring a maximum Collector Current (IC) of 100 mA and a maximum Collector-Emitter Voltage (VCEO) of 30 V, making it safe for most standard logic and low-voltage circuits.
Low Noise Characteristics: The device features good low-noise performance, which is critical when used in the input stages of amplifiers where signal fidelity must be maintained. Although it is not designated specifically as a low noise transistor, its noise performance is good having a noise figure 10 dB maximum with a VCE of 5V collector current Ic of 200µA, RG of 2kΩ and f = 1 kHz.
Complementary PNP Counterpart: It is part of a complementary pair with the BC858 (a PNP transistor), which allows engineers to easily design complementary symmetry push-pull circuits, such as class AB output stages.

• Typical application examples

Application Category	Typical Use Case	Device Feature Utilised
Signal Amplification	Low-frequency voltage amplification in audio pre-amplifiers, microphone stages, or radio frequency (RF) intermediate frequency (IF) circuits.	High Current Gain (hFE) and Low Noise performance.
Digital Logic Interfaces	Driving small loads (e.g., small relays, small LEDs, or buzzers) directly from low-power microcontroller logic pins.	Efficient switching capability and compact SOT-23 package.
Level Shifting/Translation	Interfacing between circuits running at different voltage levels (e.g., translating a 3.3V signal to a 5V circuit or vice-versa).	Reliable switching speed and standard VCEO of 30 V.
Oscillator Circuits	Use in simple timing circuits, clock generation, and general-purpose oscillator designs (e.g., Hartley or Colpitts configurations).	Stable gain and good linearity for basic frequency generation.