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IKWH50N67PR7 IGBT Data

Data for the IKWH50N67PR7 IGBT including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.

The IKWH50N67PR7 IGBT is described as a 670V 50A TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage with improved EMI characteristics offering the best-in-class performance for high power and high switching frequency applications.

This is the 50A version of the family of 670V IGBTs from Infineon.

Key details and performance parameters for the IKWH50N67PR7 IGBT, insulated gate bipolar transistor.

IKWH50N67PR7 IGBT insulated gate bipolar transistor datasheet parameters & data
Parameters	Details
Brief description	Reverse conducting IGBT for PTFC control
Package type	TO247
Collector-Emitter Voltage V_CE	670V
Gate-emitter voltage V_GES	±20V
Transient gate-emitter voltage V_GEM	±30V
Maximum continuous collector current I_C	105A at 25°C, 65A at 100°C
Maximum collector current pulsed I_CM	150A
Power dissipation P_tot	246W at 25°C, 123W at 100°C
Gate-emitter threshold voltage V_GE(th)	3.2V min, 3.95V typ, 4.8V max with Ic = 0.4A and VCE = VGE
Gate-emitter leakage current I_GES	100nA max with VCE = 0V and VGE = 20V
Collector-emitter saturation voltage V_CE(sat)	1.4V typ, 1.75V max at 25°C 1.7V typ at 175°C
Input capacitance	2846pF
Output capacitance	36.4pF typ
Reverse transfer capacitance capacitance	14.2pF
Transconductance	127S
Primary manufacturer	Infineon

Outlines & pinout:

Explanation of IGBT parameters

Parameter	Explanation
Collector-Emitter Voltage V_CES	This is the absolute maximum operating voltage for the IGBT. It is often specified at a given temperature.
Gate-emitter voltage V_GES	This is te maximum operating voltage between the gate and emitter of the device.
Transient gate-emitter voltage V_GEM	This is the maximum gate emitter voltage that can be withstood for a short period - the time period of the pulse should be specified.
Maximum continuous collector current I_C	This is the maximum continuous current that the device can handle. This is normally specified for one or more temperatures.
Maximum collector current pulsed I_CM	This is the maximum current that cna be handled for a short period - the period of the pulse should also be specified.
Collector power dissipation P_C	This is the maximum power that can be dissipated by the collector - often a temperature is specified and often a derating as well for higher temperatures.
Collector-emitter breakdown voltage BV_CES	This is the voltage at which the device becomes liable to break down. It is greater or equal to the maximum operating voltage.
Gate-emitter threshold voltage V_GE(th)	This is the voltage at which the device starts to turn on.

Parameter	Explanation
Gate-emitter leakage current I_GES	The leakage current into / out of the gate. Being a MOS-type device this is normally very low.
Collector-emitter saturation voltage V_CE(sat)	Similar to a standard bipolar transistor, an IGBT has a saturation voltage when the device is fully turned on.
Input capacitance	This is the capacitance for the gate of the device
Output capacitance	This is the capacitance seen at the output of the IGBT.
Reverse transfer capacitance capacitance	This is the capacitance between the gate and the collector terminals.
Transconductance	This is defined as the ratio of a change in the collector current to the corresponding change in the gate-emitter voltage and it is measured in terms of conductance in Siemens.
Maximum junction temperature T_J °C	This is the maximum temperature that the junction can withstand and it should be remembered that the junction will be above the package temperature and the external ambient temperature.

These are the main IGBT parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.

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Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The IKWH50N67PR7 is available from a number of stockists and electronic component distributors many of which are given in the table below.

IKWH50N67PR7 Component Distributor, Stock and Pricing

• Further details

Like other IGBTs in this family, the IKWH50N67PR7 features capabilities including: stable temperature behaviour, low temperature dependence of VCEsat and Esw, 2 kV ESD HBM compliant, and easy parallel switching capability based on positive temperature coefficient of VCEsat

The advertised applications for the device include residential and commercial aircon as well as residential and commercial HVAC. These are very similar applications to the other devices in the family, and this means the most suitable device can be selected without over-specifying the device.