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IKZ75N65EL5 IGBT Data

Data for the IKZ75N65EL5 Low V_CE(sat) IGBT including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.

The IKZ75N65EL5 IGBT is a low V_CE(sat) device and it is intended for use in uninterruptible power supplies, solar voltaic inverters and welding machines as well as many other circuits requiring high voltages, large currents and a low saturation voltage.

Key details and performance parameters for the IKZ75N65EL5 IGBT, insulated gate bipolar transistor.

IKZ75N65EL5 IGBT insulated gate bipolar transistor datasheet parameters & data
Parameters	Details
Brief description	650V 100A Low V_CE(sat)
Package type	TO247-4L
Collector-Emitter Voltage V_CES	650V
Gate-emitter voltage V_GES	±20V
Transient gate-emitter voltage V_GEM	±30V
Maximum continuous collector current I_C	100A at 25°C abd 100°C
Maximum collector current pulsed I_CM	300A
Power dissipation P_C	536W at 25°C and 268W at 100°C
Collector-emitter breakdown voltage BV_CES	650V min
Gate-emitter threshold voltage V_GE(th)	4.2V min, 5.0V typ, 5.8CV max at IC = 1mA and VCE = 20V
Gate-emitter leakage current I_GES	100nA at VCE = 0V and VGE = 20V
Collector-emitter saturation voltage V_CE(sat)	1.10V typ, 1.35V max for VGE = 15V and IC = 75A at 25°C
Input capacitance	12100pF
Output capacitance	150pF typ
Reverse transfer capacitance capacitance	42pF
Transconductance	436S
Primary manufacturer	Infineon

Outlines & pinout:

See more information about the Kelvin emitter below or in the linked page about IGBT technology.

Explanation of IGBT parameters

Parameter	Explanation
Collector-Emitter Voltage V_CES	This is the absolute maximum operating voltage for the IGBT. It is often specified at a given temperature.
Gate-emitter voltage V_GES	This is te maximum operating voltage between the gate and emitter of the device.
Transient gate-emitter voltage V_GEM	This is the maximum gate emitter voltage that can be withstood for a short period - the time period of the pulse should be specified.
Maximum continuous collector current I_C	This is the maximum continuous current that the device can handle. This is normally specified for one or more temperatures.
Maximum collector current pulsed I_CM	This is the maximum current that cna be handled for a short period - the period of the pulse should also be specified.
Collector power dissipation P_C	This is the maximum power that can be dissipated by the collector - often a temperature is specified and often a derating as well for higher temperatures.
Collector-emitter breakdown voltage BV_CES	This is the voltage at which the device becomes liable to break down. It is greater or equal to the maximum operating voltage.
Gate-emitter threshold voltage V_GE(th)	This is the voltage at which the device starts to turn on.

Parameter	Explanation
Gate-emitter leakage current I_GES	The leakage current into / out of the gate. Being a MOS-type device this is normally very low.
Collector-emitter saturation voltage V_CE(sat)	Similar to a standard bipolar transistor, an IGBT has a saturation voltage when the device is fully turned on.
Input capacitance	This is the capacitance for the gate of the device
Output capacitance	This is the capacitance seen at the output of the IGBT.
Reverse transfer capacitance capacitance	This is the capacitance between the gate and the collector terminals.
Transconductance	This is defined as the ratio of a change in the collector current to the corresponding change in the gate-emitter voltage and it is measured in terms of conductance in Siemens.
Maximum junction temperature T_J °C	This is the maximum temperature that the junction can withstand and it should be remembered that the junction will be above the package temperature and the external ambient temperature.

These are the main IGBT parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.

Read more about . . . . IGBT technology

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The IKZ75N65EL5 is available from a number of stockists and electronic component distributors many of which are given in the table below.

IKZ75N65EL5 Component Distributor, Stock and Pricing

• Further details

It is important to note that the emitter and Kelvin emitter pins are not exchangeable. Their exchange might lead to malfunction.

The Kelvin emitter on an IGBT is a dedicated connection to the emitter terminal that is separate from the main power current path.

Its primary purpose is to provide a clean reference point for the gate drive circuit, minimizing the impact of voltage drops caused by the high switching currents flowing through the parasitic inductance and resistance of the main emitter connection.