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IMT40R036M2H 400V 50A 36.4mΩ; SiC MOSFET Data
Data for the IMT40R036M2H 400V 50A 36.4mΩ silicon carbide MOSFET including electrical parameters, maximum current and voltage, pinout, package type and many other datasheet details.
The IMT40R036M2H SiC MOSFET is one of the CoolSiC range from Infineon and provides a maximum operating voltage of 400V, maximum current around 50A and a low level of RDS(ON) of around 36.4mΩ dependent upon the temperature.
Key details and performance parameters for the IMT40R036M2H SiC MOSFET.
| IMT40R036M2H Silicon Carbide MOSFET datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Brief description | 400V |
| Package type | HSOF-8 |
| Operational mode | Enhancement |
| Channel type | N-channel |
| Drain to Source voltage VDSS | 400V |
| Gate to source voltage VGSS | -7V - +23V |
| Maximum drain current continuous ID | 50A with VGS=18V at 25°C 36A with VGS=18V at 100°C |
| Maximum drain current pulsed ID | 150A at 25°C |
| Zero gate voltage drain current IDSS | 1µA typ, 75µA max at VDS=400V, VGS=0V and 25°C 2µA typ at VDS=400V, VGS=0V and 175°C |
| Gate threshold voltage VGS(th) | 3.5V min, 4.5V typ, 5.6V max with VGS=VDS and ID=9.7mA |
| Static drain source ON resistance RDS(ON) | 36.4mΩ typ, 45.7mΩ max at VGS=18V, ID=11.1A and 25°C 52.5mΩ typ, at VGS=18V, ID=11.1A and 175°C 44.6mΩ typ, at VGS=15V, ID=11.1A and 25°C |
| Input capacitance | 870pF typ, 1170 max |
| Output capacitance | 120pF |
| Reverse transfer capacitance | 10pF |
| TJ °C | 175 |
| PTOT mW | 167W |
| Primary manufacturer | Infineon |
Outlines & pinout:
Explanation of SiC MOSFET parameters
| Parameter | Explanation |
|---|---|
| Operational mode | This details whether the FET is an enhancement or depletion mode |
| Channel type | The channel of the MOSFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier. |
| Drain to Source voltage VDSS | This is the maximum voltage that can be sustained between the drain and source |
| Gate to source voltage VGSS | This is the maximum voltage that can be sustained between the drain and the gate. |
| Maximum drain current continuous ID | This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values |
| Parameter | Explanation |
|---|---|
| Zero gate voltage drain current IDSS | This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this. |
| Gate threshold voltage VGS(th) | This is the minimum gate-to-source voltage, VGS required to create a conductive channel between the source and drain terminals |
| Static drain source ON resistance RDS(ON) | This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this. |
| Drain source ON voltage VDS(ON) | This is the voltage across the device when it is turned on. Again the test conditions are given. |
| Forward transconductance gFS | Forward transconductance also given the letters gm is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔVGS, with the drain-source voltage, VDS held constant. |
These are the main SiC MOSFET parameters that have been included in our list. Being a form of MOSFET, they are basically the same as other FETs and MOSFETs.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The IMT40R036M2H is available from a number of stockists and electronic component distributors many of which are given in the table below.
IMT40R036M2H Component Distributor, Stock and Pricing
• Further details
The low RDS ON of 36.4mΩ typical at 15V and the high maximum voltage along with all the other benefits of silicon carbide MOSFETs mean that this device is ideal for use in a wide variety of power related applications.
Typical circuit types may include: solar PV inverters, uninterruptible power supplies, DC-DC converters, boost inverters and other forms of switch mode power supply as well as class D audio amplifiers and motor drives.
• Notable features
The IMT40R036M2H stands out due to its advanced material and packaging, which optimize it for demanding power electronics:
Silicon Carbide (SiC) Technology: The primary feature is the use of SiC instead of traditional silicon. This material allows the MOSFET to operate with significantly lower switching losses (due to reduced internal capacitances and low Qoss), enabling much higher switching frequencies and thus smaller, lighter, and more efficient power systems.
Low On-Resistance (RDS(on): It features a low typical static drain-source on-resistance of 36.4 mΩ (at VGS=18 V and TJ=25∘C). This low value minimizes conduction losses, which directly improves overall system efficiency.
High Operating Temperature: The device is specified for a maximum operating junction temperature (TJ) of 175∘C. This high thermal robustness is characteristic of SiC devices and is critical for applications in harsh environments like electric vehicle (EV) systems.
Commutation-Robust Fast Body Diode: SiC MOSFETs feature a body diode with superior performance compared to silicon, including low reverse recovery charge (Qrr). This makes the device highly suitable for synchronous rectification and other applications involving fast and repetitive current commutation.
High Avalanche Ruggedness: The device is 100% avalanche tested (Single Pulse Avalanche Energy EAS), ensuring robust performance and reliability under transient over-voltage conditions common in power circuits.
.XT Interconnection Technology: This is Infineon's proprietary technology designed to provide best-in-class thermal performance. It minimizes thermal resistance from the junction to the case (Rth(JC)), allowing the device to handle higher power density more reliably.
Benchmark Gate Threshold Voltage (VGS(th): A benchmark typical VGS(th) of 4.5 V is specified, making it easier to control with standard gate driver circuits (recommended driving voltage is 0 V to 18 V).
• Typical applications
| Application Sector | Key Use | Feature Utilized |
|---|---|---|
| Power Supplies | Switched-Mode Power Supplies (SMPS) for servers, data centers, and telecommunications infrastructure. | High switching frequency capability and low $\text{R}_{\text{DS(on)}}$ for maximum power density and efficiency. |
| Renewable Energy & Storage | Solar PV Inverters, Energy Storage Systems (ESS), and Uninterruptible Power Supplies (UPS). | High efficiency to minimize energy waste and low temperature dependency of R}DS(on) for stable performance. |
| E-Mobility & Charging | EV Charging infrastructure, DC-DC converters, and 48 V systems in mild-hybrid vehicles. | 175°C maximum junction temperature and high power capability for robust automotive applications. |
| Motor & Drive Control | Industrial motor control, power tools, and high-performance Class-D audio amplifiers. | Fast switching and low parasitic capacitances for precise control and high-quality output. |
Written by Ian Poole .
Experienced electronics engineer and author.
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