Home » Component data » MOSFET data » this page
PSMN3R3-80YSF MOSFET Data
Data for the PSMN3R3-80YSF 80V 3.1mΩ 160A MOSFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.
The PSMN3R3-80YSF MOSFET is a NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.
Key details and performance parameters for the PSMN3R3-80YSF MOSFET.
| PSMN3R3-80YSF MOSFET datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Brief description | NextPower 80 V, 3.1 mOhm, 160 A, N-channel MOSFET |
| Package type | SOT669 |
| Operational mode | Enhancement |
| Channel type | N-channel |
| Drain to Source voltage VDSS | 80V |
| Drain to gate voltage VDGR | -20V to +20V |
| Maximum drain current continuous ID | 160A with VGS = 10V at 25°C |
| Maximum drain current peak ID | 754A for t ≤10&Mmicro;s at 25°C |
| Zero gate voltage drain current IDSS | 0.07µA typ, 1µA max for VDS = 80V VGDS = 0V at 25°C 2µA typ, 100µA max for VDS = 80V VGDS = 0V at 125°C |
| Gate threshold voltage VGS(th) | 2V min, 3V typ, 4V max for ID = 1mA, VDS = VGS at 25°C |
| Static drain source ON resistance RDS(ON) | 2.5mΩ typ, 3.1mΩ max for VGS=10V ID = 25A at 25°C |
| Input capacitance | 2938pF min, 4896pF typ, 6854pF max |
| Output capacitance | 448pF min, 1121pF typ, 2018pF max |
| Transfer reverse capacitance | 11pF min, 53pF max, 122pF max |
| TJ °C | 175 |
| PTOT mW | 254mW |
| Primary manufacturer | Nexperia |
Outlines & pinout:
Explanation of MOSFET parameters
| Parameter | Explanation |
|---|---|
| Operational mode | This details whether the FET is an enhancement or depletion mode |
| Channel type | The channel of the MOSFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier. |
| Drain to Source voltage VDSS | This is the maximum voltage that can be sustained between the drain and source |
| Gate to source voltage VGSS | This is the maximum voltage that can be sustained between the drain and the gate. |
| Maximum drain current continuous ID | This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values |
| Parameter | Explanation |
|---|---|
| Zero gate voltage drain current IDSS | This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this. |
| Gate threshold voltage VGS(th) | This is the minimum gate-to-source voltage, VGS required to create a conductive channel between the source and drain terminals |
| Static drain source ON resistance RDS(ON) | This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this. |
| Drain source ON voltage VDS(ON) | This is the voltage across the device when it is turned on. Again the test conditions are given. |
| Forward transconductance gFS | Forward transconductance also given the letters gm is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔVGS, with the drain-source voltage, VDS held constant. |
These are the main MOSFET parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The PSMN3R3-80YSF is available from a number of stockists and electronic component distributors many of which are given in the table below.
PSMN3R3-80YSF Component Distributor, Stock and Pricing
• Further details
The PSMN3R3-80YSF is suitable for many circuit designs including: synchronous rectifiers in AC-DC and DC-DC converters, primary side switch in DC-DC converters, brushless DC (BLDC) motor controls, USB Power Delivery adapters, full-bridge and half-bridge applications, flyback and resonant topologies, and many more circuits. 
Written by Ian Poole .
Experienced electronics engineer and author.
Return to Component Data menu . . .
