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2N5401 Transistor Data

Key transistor data for the 2N5401 PNP transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.

The 2N54051 is a high-voltage PNP bipolar junction transistor designed for general-purpose amplification and switching, offering a collector-emitter voltage rating of up to -150 V.

The 2N5401 PNP transistor is often paired with a 2N5551 high voltage transistor in push pull, class B amplifiers where the two transistors can cover different halves of the cycle.

Key details and performance parameters for the 2N5401 transistor.

2N5401 transistor datasheet parameters & data
Parameters	Details
Transistor type	PNP high voltage transistor
Package type	TO92
V_CBO max (V)	-160V
V_CEO max (V)	-150V
V_EBOmax (V)	-5V
V_CEsat (V)	0.2V max for IC = -10mA and IB =-1mA, and 0.5V for IC = -50mA and IB = -5mA
I_C max (mA)	-600mA
T_J Max °C	-55 - +150°C
P_TOT mW	625mW
Gain bandwidth product f_T min (MHz)	100 min, 400 max
Collector base capacitance C_CBO	6pF
h_fe	50 min at IC = -1mA &; VCE = -5V, 60min and 240 max at IC = -10mA &; VCE = -5V, 50 min at IC = -50mA &; VCE = -5V
Similar / equivalents

Outline & pinout:

Explanation of transistor parameters

Parameter	Explanation
V_CBO Max	Maximum collector-base voltage with emitter open circuit .
V_CEO Max	Maximum collector-emitter voltage with base open circuit.
V_EBO Max	Maximum emitter-base voltage with collector open circuit.
V_CEsat (included where applicable)	The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch).
I_C Max	Maximum collector current.

Parameter	Explanation
T_J	Maximum junction temperature.
P_TOT Max	Maximum device dissipation normally in free air at 25°C unless other conditions indicated.
f_T Min	Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity.
C_OB Max	Maximum collector capacitane, normally measured with emitter open circuit.
h_FE	DC current gain for H_FE at I_C. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.]
P_TOT Max	Maximum device dissipation normally in free air at 25°C unless other conditions indicated.

These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

Read more about . . . . Transistor Data-sheet Specifications & Parameters.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The 2N5401 is available from a number of stockists and electronic component distributors many of which are given in the table below.

2N5401 Component Distributor, Stock and Pricing

• Notable features

The 2N5401 is a high-voltage PNP silicon bipolar junction transistor in a TO-92 package, complementary to the 2N5551, designed for general-purpose amplification and switching in medium-voltage applications.

High Collector-Emitter Voltage : VCEO = 150 V, enabling use in high-voltage circuits.
Collector Current Capability : Continuous IC up to 600 mA, suitable for medium-power tasks.
DC Current Gain : hFE ranges from 60 to 240 (depending on variant), with good linearity across currents.
Transition Frequency : fT = 100-400 MHz, supporting high-speed switching and RF applications.
Low Saturation Voltage : VCE(sat) ≤ -0.2 V at IC = -10 mA, for efficient switching.
Low Noise Figure : 8 dB at specified conditions, ideal for audio preamplifiers.
Power Dissipation : 625 mW, with thermal resistance of 200°C/W junction-to-ambient.
Complementary Pairing : Pairs well with 2N5551 NPN for push-pull configurations.

• Typical applications summary

Application Category	Typical Use Case	Device Feature Utilised
Audio Amplification	Preamp stages in high-voltage audio circuits and microphones.	Low noise figure (8 dB) and high gain (hFE 60-240) for clean signal amplification.
High-Voltage Switching	Relay drivers, LED control, and solenoid actuation in 100-150V systems.	High VCEO (150 V) and low saturation voltage (-0.2 V) for efficient operation.
Complementary Circuits	Push-pull amplifiers paired with 2N5551.	Matching specs with 2N5551 for balanced performance.
Signal Processing	Active filters, oscillators, and sensor interfaces.	High fT (100-400 MHz) and gain linearity for precise signal handling.
General Purpose	Hobby projects, educational kits, and prototype circuits requiring PNP high voltage.	Versatile high-voltage and current specs in a compact TO-92 package.