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DXTN78030 Transistor Data
Key transistor data for the DXTN78030 transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.
The DXTN78030DFG is one of a series of modern very low on resistance bipolar transistors from Diodes Inc. which are intended for high performance automotive circuits, although there are many other uses.
Key details and performance parameters for the DXTN78030 transistor.
| DXTN78030 transistor datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Transistor type | NPN |
| Package type | PowerDI 3333-8 |
| VCBO max (V) | 80V |
| VCEO max (V) | 30V |
| VEBOmax (V) | 8V |
| VCEsat (V) | 30mV typ at IC = 100mA and IB = 1mA 20mV typ 35mV max at IC = 1A and IB = 100mA 55mV typ 75mV max at IC = 2A and IB = 140mA 90mV typ 125mV max at IC = 4A and IB = 80mA 140mV typ 175mV max at IC = 9A and IB = 450mA |
| IC max | 4A with device mounted with collector tab on FR4PCB in still air 9A with device mounted with collector tab on 15mm x 15mm 2oz copper |
| TJ °C | -55 - +175°C |
| PTOT mW | 900mW, 2.4W when mounted on 25 x 25mm 2oz copper |
| fT min (MHz) | 150 MHz min, 260MHz typ |
| COB | 30pF |
| hfe | 200 min for Ic = 10mA & VCE = 2V 300 min, 390 typ, 550max for Ic = 100mA & VCE = 2V 270 min, 370 typ for Ic = 1A & VCE = 2V 250 min, 350 typ for Ic = 2A & VCE = 2V 200 min, 300 typ for Ic = 4A & VCE = 2V 100 min, 180 typ for Ic = 9A & VCE = 2V |
| Primary manufacturer | Diodes Inc |
Outline & pinout:
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The DXTN78030 is available from a number of stockists and electronic component distributors many of which are given in the table below.
DXTN78030 Component Distributor, Stock and Pricing
• Notable features
The DXTN78030DFGQ is an NPN bipolar transistor optimized for high-current switching with ultra-low saturation voltage, making it ideal for efficient power management in demanding applications.
Ultra-Low Saturation Voltage: VCE(sat) less than 35mV at 1A, enabling minimal power loss in switching operations.
High Current Handling: Supports continuous collector current up to 9A and peak pulse current up to 15A when on suitable heatsink, suitable for medium-power requirements.
High Voltage Ratings: BVCEO greater than 30V and BVEBO greater than 8V, providing robust voltage withstand capabilities.
High Current Gain: hFE minimum of 300 at 0.1A and 100 at 9A, ensuring efficient amplification and switching.
High-Temperature Operation: Rated for up to +175°C, ideal for harsh environments like automotive systems.
Automotive Qualification: AEC-Q101 qualified and PPAP capable, with manufacturing in IATF 16949 certified facilities.
Compact and Thermally Efficient Package: PowerDI3333-8 package with wettable flanks for improved solder joint inspection and thermal performance.
Complementary Pairing: Pairs with DXTP78030DFGQ PNP transistor for complementary circuit designs.
• Typical applications summary
| Application Category | Typical Use Case | Device Feature Utilised |
|---|---|---|
| Gate Driving | MOSFET and IGBT gate drivers in power electronics | High current gain and low saturation voltage for efficient switching |
| Switching | Load switches in automotive and industrial systems | High current handling and ultra-low VCE(sat) for reduced power dissipation |
| Power Regulation | Low-voltage regulation circuits | Voltage ratings and high-temperature operation for reliable performance |
| Power Conversion | DC to DC converters | Peak pulse current capability and thermal efficiency |
| Actuator Control | Drivers for motors, solenoids, relays, and actuators | Automotive qualification and robust current/voltage ratings |
Written by Ian Poole .
Experienced electronics engineer and author.
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