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The DXTN80100CFG is one of a series of modern very low on resistance bipolar transistors from Diodes Inc. which are intended for high performance automotive circuits, although there are many other uses.

Key details and performance parameters for the DXTN80100 transistor.

Explanation of transistor parameters

These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

  •   Availability & sources

The DXTN80100 is available from a number of stockists and electronic component distributors many of which are given in the table below.

DXTN80100 Component Distributor, Stock and Pricing

Why use a BJT rather than a MOSFET

There are several reasons for using a bipolar transistor rather than a power MOSFET.

Choosing between a Bipolar Junction Transistor with ultra-low saturation voltage like the DXTN80100 and a Power MOSFET often comes down to the specific drive requirements, voltage levels, and the nature of the load.

While Power MOSFETs are often the "default" choice for modern switching, ultra-low VCE(sat) BJTs offer several distinct advantages in specific scenarios.

1. Lower Gate/Base Drive Complexity

One of the primary reasons to choose a BJT like the DXTN80100 is the drive voltage.

• MOSFETs:   Most Power MOSFETs require a Gate-Source voltage (VGS) of 4.5V to 10V to fully enhance the channel and achieve low RDS(on)​. If you are working with a low-voltage microcontroller (e.g., 1.8V or 2.5V logic), you would need a level shifter or a dedicated gate driver.

• BJTs:   A BJT only requires a base-emitter voltage (VBE) of about 0.7V to begin conducting. While it requires current to stay on, it can be driven directly from very low-voltage rails that would fail to turn on a MOSFET.

2. Performance at Very Low Operating Voltages

In battery-powered devices (like a single 1.2V NiMH cell), there isn't enough voltage to effectively drive the gate of a MOSFET.

• A MOSFET's resistance increases exponentially as the gate voltage nears its threshold.

• Ultra-low VCE(sat) transistor like the DXTN70030 maintains a very low voltage drop (often less than 100mV) even when the supply voltage is extremely low.

3. Lower Cost for Specific Current/Voltage Ranges

At lower voltage ratings (under 100V) and moderate currents (under 5A), BJTs are often significantly cheaper than MOSFETs with comparable "on-state" losses. To get a MOSFET with an RDS(on)​ low enough to compete with a 100mV VCE(sat)​ drop at 3 Amps, you often have to buy a much larger, more expensive silicon die.

4. Bipolar vs. Unipolar Switching (The "Diode" Effect)

• MOSFETs have an intrinsic body diode. In certain bridge circuits or battery protection circuits, this diode allows current to flow in the reverse direction even when the MOSFET is "off."

• BJTs do not have an intrinsic body diode. This makes them useful in applications requiring reverse blocking or where you need to prevent back-feeding into a power source without adding an extra Schottky diode.

5. Thermal Stability and Safe Operating Area (SOA)

BJTs are generally more robust against certain types of transient overloads. While MOSFETs are prone to "thermal runaway" in linear regions, BJTs can sometimes be easier to manage in slow-switching or linear-mode applications (like a linear LDO pass element), provided you stay within the Safe Operating Area.

  •   Notable features

The DXTN80100CFGQ is a 100V NPN ultra-low saturation voltage transistor from Diodes Incorporated, designed for high-efficiency switching in compact automotive and industrial applications.

• Ultra-Low Saturation Voltage:   VCE(sat) typically < 60mV at 1A, minimizing power loss for enhanced efficiency.

• High Current Handling:   Continuous collector current up to 5.5A with peak capabilities for medium-power demands.

• Robust Voltage Ratings:   BVCEO > 100V, BVCBO > 150V, and BVEBO > 8V, providing strong withstand in high-voltage circuits.

• High Current Gain:   hFE optimized for reliable amplification and switching performance.

• Wide Temperature Range:   Operational from -55°C to +175°C, suitable for harsh environments.

• Automotive Qualification:   AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive systems.

• Compact Thermally Efficient Package:   PowerDI3333-8 package with wettable flanks for improved solderability and thermal management.

• Complementary Pairing:   Available with complementary PNP transistor for versatile circuit designs.

  •   Typical applications summary

  Written by Ian Poole .
  Experienced electronics engineer and author.