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DXTP78030 Transistor Data
Key transistor data for the DXTP78030 transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.
The DXTP78030DFG is one of a series of modern very low on resistance PNP bipolar transistors from Diodes Inc. which are intended for high performance automotive circuits, although there are many other uses.
The DXTP78030 is the PNP complement of the NPN DXTN78030 and this enables higher power driver stages to be designed using these transistors.
Key details and performance parameters for the DXTP78030 transistor.
| DXTP78030 transistor datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Transistor type | PNP |
| Package type | PowerDI 3333-8 |
| VCBO max (V) | -40V |
| VCEO max (V) | -30V |
| VEBOmax (V) | -8V |
| VCEsat (V) | -40mV typ at IC = -100mA and IB = -1mA -50mV typ -70mV max at IC = 1-A and IB = -20mA -25mV typ -40mV max at IC = -1A and IB = -100mA -140mV typ -170mV max at IC = -6.5A and IB = -325mA |
| IC max | -3A with device mounted with collector tab on FR4PCB in still air -6.5A with device mounted with collector tab on 15mm x 15mm 2oz copper -12A peak pulse current |
| TJ °C | -55 - +175°C |
| PTOT mW | 900mW, 2.4W when mounted on 25 x 25mm 2oz copper |
| fT min (MHz) | 200 MHz min, 315MHz typ |
| COB | 24pF |
| hfe | 250 min 440 typ for Ic = -10mA & VCE = -2V 300 min, 430 typ, 550max for Ic = -100mA & VCE = -2V 220 min, 355 typ for Ic = -1A & VCE = -2V 175 min, 275 typ for Ic = -2A & VCE = -2V 150 min, 235 typ for Ic = -3A & VCE = -2V 90 min, 135 typ for Ic = -6.5A & VCE = -2V |
| Primary manufacturer | Diodes Inc |
Outline & pinout:
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The DXTP78030 is available from a number of stockists and electronic component distributors many of which are given in the table below.
DXTP78030 Component Distributor, Stock and Pricing
• Notable features
The DXTP78030 is part of Diodes Incorporated's ultra-low VCE(sat) PNP bipolar transistor series, optimized for high-efficiency power switching in compact automotive designs.
Ultra-Low Saturation Voltage: As low as 17mV at 1A, minimizing conduction losses by up to 50% compared to previous generations.
High Current Ratings: Continuous current up to 10A with peak pulse capability of 20A for robust performance in medium-power applications.
Robust ESD Protection: HBM 4kV and CDM 1kV for enhanced reliability in harsh environments.
Wide Operating Temperature: Up to +175°C continuous operation, ideal for automotive and industrial uses.
Compact Package: PowerDI 3333-8 (3.3mm x 3.3mm) reduces PCB footprint by up to 75% versus traditional packages, with low thermal resistance of 4.2°C/W.
Automotive Compliance: AEC-qualified, supports PPAP, and manufactured in IATF 16949-certified facilities.
Improved Solderability: Side-wall plateable (SWP) feature for better automated optical inspection (AOI) and stronger solder joints.
• Typical applications summary
| Application Category | Typical Use Case | Device Feature Utilised |
|---|---|---|
| Gate Driving | Driving MOSFETs and IGBTs in power electronics | Ultra-low saturation voltage for efficient switching |
| Switching | Power line and load switching | High current ratings and low power loss |
| Power Regulation | Low-dropout (LDO) voltage regulation | Robust voltage handling and thermal performance |
| Power Conversion | DC-DC conversion | High ESD robustness and compact package |
| Actuator Control | Driving motors, solenoids, relays, and actuators | Automotive qualification and wide temperature range |
Written by Ian Poole .
Experienced electronics engineer and author.
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