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MBR745 Schottky Diode Data
Key data for the MBR745 Schottky diode including key electrical parameters, performance, features, outline, package type and many other key datasheet details.
The MBR745 is one of a series of Schottky diodes that provides a 45V reverse voltage, 7.5A forward current and a 0.57V forward voltage at its rated current of 7.5A.
Key details and datasheet performance parameters for the MBR745 diode.
MBR745 diode datasheet parameters & data |
|
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Parameters | Details |
Diode type | 60V 7.5A Schottky diode in TO220 package |
Package type | TO220-2 & ITO220 |
Repetitive peak reverse voltage, VRRM | 45V |
Working peak reverse voltage, VRWM | 45V |
DC blocking voltage, VR | 45V |
Forward continuous current, IF | 7.5A |
Non-repetitive forward surge current, IFSM | 150A |
Junction temperature (°C) | -65 - 150°C |
Forward voltage VF | 0.57V at 7.5A @15°C |
Reverse leakage IR | 0.1mA at 25°C at VR 60V & 515mA at 125°C at VR 60V |
Outline & pinout:
Explanation of major diode parameters
Parameter | Explanation |
---|---|
Repetitive peak reverse voltage, VRRM | This is the maximum value of the short period peak reverse voltage that can be sustained. |
Working peak reverse voltage, VRWM | This is the maximum value of the continuous reverse voltage that can be applied to the diode. |
DC blocking voltage, VR | This is the maximum reverse DC voltage that should be applied across the diode. |
RMS reverse voltage, VR(RMS) | As many AC waveforms are quoted in RMS, this is the maximum reverse voltage that can be sustained where the voltage is expressed in terms of its RMS value. |
Forward continuous current, IF | This is the maximum forward current that can be sustained by the diode. |
Average rectified current, IF | This is the maximum average current value that can be handled by the diode. The parameter often states the load as this will affect the operation of the diode. |
Non-repetitive forward surge current, IFSM | This is the maximum surge current that can be handled - it should only be present for a short time. |
Parameter | Explanation |
---|---|
Power dissipation, PTOT | The maximum power dissipation that can be sustained within the device. |
Junction temperature (°C) | This is the maximum temperature of the PN junction that can be sustained. Remember that the junction temperature can be much higher than the ambient temperature of the equipment. |
Forward voltage VF | This parameter gives the forward voltage drop for a particular current passed through the diode. |
Breakdown voltage VBR | This is the minimum voltage at which the diode may breakdown. If the current is not limited it will lead to the destruction of the device. |
Leakage current IR | This is the current that flows under stated conditions when the diode is reverse biassed. |
Diode capacitance CD | The diode capacitance, CD may also be referred to as the junction capacitance, CJ. All diodes have a certain capacitance across the PN junction. The value will be stated for a given reverse voltage. |
Reverse recovery time | If a diode is initially driven in forward bias, and the polarity suddenly switches to reverse bias, the diode will still remain conducting for some time. The reverse recovery time is the time required for conduction to settle into the reverse bias state. |
These are the main Schottky diode parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the diode.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The MBR745 is available from a number of stockists and electronic component distributors many of which are given in the table below.
MBR745 Component Distributor, Stock and Pricing
The MBR745 is a high-performance Schottky Barrier Rectifier designed for use in low-voltage, high-frequency applications where efficiency and fast switching are paramount. It is characterized by its 7.5A average forward current and 45V repetitive peak reverse voltage rating.
• Notable features
The MBR745 diode incorporates several key design features to ensure optimal performance, particularly in power switching and rectification circuits.
Low Power Dissipation: The device exhibits an intrinsically low forward voltage drop (VF), which significantly reduces power losses and enhances the overall operating efficiency of the system it's implemented in.
Fast Switching Speed: As a Schottky rectifier, it inherently has a negligible reverse recovery time (low trr), making it ideally suited for high-frequency switching applications like those found in modern power supplies and converters.
Robust Overvoltage Protection: A built-in guard ring structure provides a degree of transient protection, enhancing the device's ruggedness and long-term reliability against potential voltage spikes.
High Operating Temperature: The proprietary barrier technology allows for a maximum junction operating temperature (TJ) of up to 150°C or in some versions up to 175°C, ensuring reliable performance in elevated thermal environments.
High Surge Current Capability: It is designed to withstand a considerable non-repetitive peak forward surge current (IFSM) of up to 150A (for an 8.3ms half sine-wave), which is crucial for handling power-up transients and short-term overloads.
• Typical applications summary
Application Category | Typical Use Case | Device Feature Utilised |
---|---|---|
Switching Power Supplies (SMPS) | Output rectification stage for low-voltage, high-current DC outputs. | The high frequency operation and low forward voltage drop are key to maximizing the efficiency of the power supply. |
DC/DC Converters | Use in various converter topologies (e.g., buck, boost) for efficient power transfer and fast switching. | The near-zero reverse recovery time ensures minimal switching losses at high PWM frequencies. |
Freewheeling Diodes | Clamping back-EMF spikes and safely conducting reactive currents in circuits with inductive loads like motors or relays. | The low VF and rapid turn-on speed efficiently divert energy from inductive loads. |
Reverse Polarity Protection | Protecting sensitive electronic circuits and batteries from damage due to incorrectly connected power sources. | The fast switching capability, coupled with its high surge capacity, provides quick and robust protection from reverse current. |
Written by Ian Poole .
Experienced electronics engineer and author.
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