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MBR760 Schottky Diode Data

Key data for the MBR760 Schottky diode including key electrical parameters, performance, features, outline, package type and many other key datasheet details.

The MBR760 is one of a series of Schottky diodes that provides a 60V reverse voltage, 7.5A forward current and a 0.75V forward voltage at its rated current of 7.5A.

Key details and datasheet performance parameters for the MBR760 diode.

MBR760 diode datasheet parameters & data
Parameters	Details
Diode type	60V 7.5A Schottky diode in TO220 package
Package type	TO220-2
Repetitive peak reverse voltage, V_RRM	60V
Working peak reverse voltage, V_RWM	60V
DC blocking voltage, V_R	60V
Forward continuous current, I_F	7.5A
Non-repetitive forward surge current, I_FSM	150A
Junction temperature (°C)	-65 - 150°C
Forward voltage V_F	0.75V at 7.5A @25°C, 0.65V at 7.5A @125°C
Reverse leakage I_R	0.5mA at 25°C at VR 60V & 50mA at 125°C at VR 60V

Outline & pinout:

Explanation of major diode parameters

Parameter	Explanation
Repetitive peak reverse voltage, V_RRM	This is the maximum value of the short period peak reverse voltage that can be sustained.
Working peak reverse voltage, V_RWM	This is the maximum value of the continuous reverse voltage that can be applied to the diode.
DC blocking voltage, V_R	This is the maximum reverse DC voltage that should be applied across the diode.
RMS reverse voltage, V_R(RMS)	As many AC waveforms are quoted in RMS, this is the maximum reverse voltage that can be sustained where the voltage is expressed in terms of its RMS value.
Forward continuous current, I_F	This is the maximum forward current that can be sustained by the diode.
Average rectified current, I_F	This is the maximum average current value that can be handled by the diode. The parameter often states the load as this will affect the operation of the diode.
Non-repetitive forward surge current, I_FSM	This is the maximum surge current that can be handled - it should only be present for a short time.

Parameter	Explanation
Power dissipation, P_TOT	The maximum power dissipation that can be sustained within the device.
Junction temperature (°C)	This is the maximum temperature of the PN junction that can be sustained. Remember that the junction temperature can be much higher than the ambient temperature of the equipment.
Forward voltage V_F	This parameter gives the forward voltage drop for a particular current passed through the diode.
Breakdown voltage V_BR	This is the minimum voltage at which the diode may breakdown. If the current is not limited it will lead to the destruction of the device.
Leakage current I_R	This is the current that flows under stated conditions when the diode is reverse biassed.
Diode capacitance C_D	The diode capacitance, C_D may also be referred to as the junction capacitance, C_J. All diodes have a certain capacitance across the PN junction. The value will be stated for a given reverse voltage.
Reverse recovery time	If a diode is initially driven in forward bias, and the polarity suddenly switches to reverse bias, the diode will still remain conducting for some time. The reverse recovery time is the time required for conduction to settle into the reverse bias state.

These are the main Schottky diode parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the diode.

Read more about . . . . Diode Specifications & Parameters.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The MBR760 is available from a number of stockists and electronic component distributors many of which are given in the table below.

MBR760 Component Distributor, Stock and Pricing

• Notable features

The MBR760 is specifically engineered for high-efficiency power applications, utilising the characteristics of its Schottky barrier construction.

Low Forward Voltage Drop V_F : This critical feature, with a maximum of 0.75 V at 7.5A (at 25°C), minimizes power dissipation and heat generation, which significantly improves the overall system efficiency.
High Average Rectified Current (I0) and Repetitive Reverse Voltage (V_RRM) : The device is rated for an average rectified current of 7.5A and a peak repetitive reverse voltage of 60V}, making it suitable for medium-power rectification needs.
Low Power Loss and High Efficiency : The fundamental advantage of a Schottky diode is its **metal-silicon junction**, which allows for majority carrier conduction and virtually eliminates the reverse recovery charge, resulting in fast switching with minimal power loss.
High Forward Surge Capability (I_FSM) : With a peak non-repetitive surge current of up to 150A (8.3 ms half sine wave), the diode is rugged and can reliably withstand short-duration current transients.
Guard Ring for Over-Voltage Protection (OVP) : An integrated guard ring structure provides enhanced reliability and long-term stability by protecting the diode junction from transient voltage spikes.
High Operating Junction Temperature : The device is capable of operating with a maximum junction temperature T_J of 150°C, allowing for robust performance in demanding thermal environments.

• Typical applications summary

Application Category	Typical Use Case	Device Feature Utilised
Switching Mode Power Supplies (SMPS)	Secondary rectification and output stage rectifiers in low voltage, high-frequency converters.	The low forward voltage drop and high-speed switching (due to virtually no reverse recovery time) minimize energy loss during the rectification process.
DC/DC Converters	Output rectification and overall use in high-efficiency DC/DC conversion circuits.	The low power loss and high efficiency characteristic are key to achieving high-density power conversion in compact designs.
Freewheeling Diode Circuits	Used across inductive loads in motor drives, relays, or high-frequency inverters to protect switching components.	The high-speed switching enables quick conduction of flyback energy, and the low forward voltage drop minimizes the power dissipated during this phase.
Polarity Protection	Preventing damage to sensitive circuitry from accidentally reversed power connections (reverse battery protection).	The low forward voltage drop minimizes voltage loss in the normal, protected path, while the diode's reverse blocking capability provides protection.