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GAN111-650WSB GaN FET Data

Data for the GAN111-650WSB GaN FET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.

The GAN111-650WSB from Nexperia is a 650 V, 97 mΩ Gallium Nitride FET that is packaged within a TO-247 package.

This GaN FET is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies.

Key details and performance parameters for the GAN111-650WSBQ GaN FET.

GAN111-650WSB GaN FET datasheet parameters & data
Parameters	Details
Brief description	650 V, 97 mOhm Gallium Nitride (GaN) FET
Package type	TO247
Operational mode	Enhancement
Channel type	N channel
Drain to Source voltage V_DS	650V
Transient drain to Source voltage V_TDS	725V
Gate to source voltage V_GS	-20V to +20V
Maximum drain current continuous I_D	21A with VGS = 10V at 25°C
Gate threshold voltage V_GS(th)
Static drain source ON resistance R_DS(ON)	79mΩ typ, 114mΩ max at VGS = 10V, ID = 14A and 25°C
Input capacitance	336pF
Output capacitance	49pF
Reverse transfer capacitance capacitance	0.3pF
T_J °C	175
P_TOT mW	107W at 25°C

Outlines & pinout:

Explanation of GaN FET parameters

Parameter	Explanation
Operational mode	This details whether the FET is an enhancement or depletion mode
Channel type	The channel of the MOSFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier.
Drain to Source voltage V_DSS	This is the maximum voltage that can be sustained between the drain and source
Gate to source voltage V_GSS	This is the maximum voltage that can be sustained between the drain and the gate.
Maximum drain current continuous I_D	This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values

Parameter	Explanation
Gate threshold voltage V_GS(th)	This is the minimum gate-to-source voltage, V_GS required to create a conductive channel between the source and drain terminals
Static drain source ON resistance R_DS(ON)	This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this.
Drain source ON voltage V_DS(ON)	This is the voltage across the device when it is turned on. Again the test conditions are given.

These are the main GaN parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.

Read more about . . . . FET Specifications & Parameters.

Read more about . . . . GaN FET technology

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The GAN111-650WSB is available from a number of stockists and electronic component distributors many of which are given in the table below.

GAN111-650WSB Component Distributor, Stock and Pricing

• Further details

It is worth noting that a DC-link resonance damper is recommended in all cases. Optimal performance is achieved using a 30 nF in series with a 3.3Ω resistor.

This is most easily achieved with parallel combination three sections comprising a 10 nF capacitor and a 10Ω resistor.

This resonance damper lowers the Q factor of any resonance in the bus. That resonance will act as a load on the high gain amplifier that is the GaN FET and can lead to instability.

For very high current, an RC snubber is recommended for the switching node. This will increase switching loss, so this is only recommended at high power levels where the losses are a very small percentage of the total power.