Home » Component data » GaN FET data » this page
IGC019S06S1 GaN FET Data
Data for the IGC019S06S1 GaN FET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.
GaN FETs offer an amazing level of performance: high frequency, very low RDS<(ON) figures and a great level of overall performance.
Key details and performance parameters for the IGC019S06S1 GaN FET.
| IGC019S06S1 GaN FET datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Brief description | 60V 99A 1.3mΩ |
| Package type | TSON-6 |
| Operational mode | Enhancement |
| Channel type | N-channel |
| Drain to Source voltage VDS | 60V |
| Gate to source voltage VGS | -4.0V min, 5.0V typ, 5.5V max |
| Maximum drain current continuous ID | 99A at VGS = 5V and 25°C |
| Maximum drain current pulsed ID | 700A at 25°C and 380A at 150°C |
| Gate threshold voltage VGS(th) | 1.2V min, 2.0 typ, 2.9V max at VDS = VGS, ID = 12mA |
| Static drain source ON resistance RDS(ON) | 1.3mΩ typ, 1.9mΩ max at VGS = 5V, ID = 35A |
| Input capacitance | 1450pF typ, 1700pF max |
| Output capacitance | 700pF typ, 770pF max |
| Reverse transfer capacitance capacitance | 17pF typ, 22pF max |
| TJ °C | 150 |
| PTOT mW | 45W at 25°C |
Outlines & pinout:
Explanation of GaN FET parameters
| Parameter | Explanation |
|---|---|
| Operational mode | This details whether the FET is an enhancement or depletion mode |
| Channel type | The channel of the MOSFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier. |
| Drain to Source voltage VDSS | This is the maximum voltage that can be sustained between the drain and source |
| Gate to source voltage VGSS | This is the maximum voltage that can be sustained between the drain and the gate. |
| Maximum drain current continuous ID | This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values |
| Parameter | Explanation |
|---|---|
| Gate threshold voltage VGS(th) | This is the minimum gate-to-source voltage, VGS required to create a conductive channel between the source and drain terminals |
| Static drain source ON resistance RDS(ON) | This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this. |
| Drain source ON voltage VDS(ON) | This is the voltage across the device when it is turned on. Again the test conditions are given. |
These are the main GaN parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The IGC019S06S1 is available from a number of stockists and electronic component distributors many of which are given in the table below.
IGC019S06S1 Component Distributor, Stock and Pricing
• Further details
Written by Ian Poole .
Experienced electronics engineer and author.
Return to Component Data menu . . .
