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2N3819 JFET Data
Data for the 2N3819 JFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.
The 2N3819 JFET has been around for many years and it is one of the 'go-to' devices that are used in various circuits. It is ideal for use in many RF amplifier and mixer circuits.
Key details and performance parameters for the 2N3819 JFET.
| 2N3819 JFET datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Brief description | Silicon N-channel JFET designed for RF amplifiers and mixers |
| Package type | TO92 |
| Operational mode | |
| Channel type | N-channel |
| Drain to gate voltage VDG | 25V |
| Drain to source voltage VDS | 25V |
| Gate to source voltage VGS | 25V |
| Maximum drain current continuous ID | |
| Maximum gate current continuous IG | 10mA |
| Gate leakage current IGSS | 2nA max with VGS = 15V at 25°C and 2µA max with VGS = 15V at 100°C |
| Zero gate voltage drain current IDSS | 2mA min, 20mA typ with VDS = 15V |
| Input capacitance | 8pF typ |
| Output capacitance | 4pF typ |
| TJ °C | 150°C |
| PTOT mW | 360mW |
Outlines & pinout:
Explanation of JFET parameters
| Parameter | Explanation |
|---|---|
| Operational mode | This details whether the FET is an enhancement or depletion mode |
| Channel type | The channel of the JFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier. |
| Drain to Source voltage VDSS | This is the maximum voltage that can be sustained between the drain and source |
| Gate to source voltage VGSS | This is the maximum voltage that can be sustained between the drain and the gate. |
| Maximum drain current continuous ID | This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values |
| Parameter | Explanation |
|---|---|
| Zero gate voltage drain current IDSS | This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this. |
| Gate threshold voltage VGS(th) | This is the minimum gate-to-source voltage, VGS required to create a conductive channel between the source and drain terminals |
| Static drain source ON resistance RDS(ON) | This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this. |
| Drain source ON voltage VDS(ON) | This is the voltage across the device when it is turned on. Again the test conditions are given. |
| Forward transconductance gFS | Forward transconductance also given the letters gm is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔVGS, with the drain-source voltage, VDS held constant. |
These are the main JFET parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The 2N3819 is available from a number of stockists and electronic component distributors many of which are given in the table below.
2N3819 Component Distributor, Stock and Pricing
• Further details
The 2N3819 is a well-loved and widely used JFET which has been available for many years and is still widely available from a variety of reputable sources. It was developed for use in RF amplifiers and RF mixers.
Written by Ian Poole .
Experienced electronics engineer and author.
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