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2N5457 JFET Data
Data for the 2N5457 JFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.
The 2N5457 is an N−Channel Junction Field Effect Transistor, depletion mode (Type A) designed for audio and switching applications.
The device is a general-purpose JFET that is a staple for many hobbyist and professional designs. It is often used in voltage-controlled amplifiers, oscillators and very many other circuits.
Key details and performance parameters for the 2N5457 JFET.
| 2N5457 JFET datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Brief description | General purpose N-channel depletion mode JFET |
| Package type | TO92 |
| Operational mode | Depletion mode |
| Channel type | N channel |
| Drain to Source voltage VDSS | 25V |
| Drain to gate voltage VDGR | 25V |
| Reverse gate to source voltage VGSR | -25V |
| Zero gate voltage drain current IDSS | 1.0mA min, 3.0mA typ, 5.0mA max at VDS = 15V and VGS = 0V |
| Gate source voltage VGS | -2.5Vdc with VDS = 15V and Id = 100µA |
| Gate source breakdown voltage VGS | -25Vdc min |
| Gate source cutoff voltage VGS(off) | -0.5V min, -6.0V max wih VDS = 15V |
| Gate reverse current IGSS | -1.0nA with VGS = 15V and VDS = 0V |
| Forward transfer admittance | YFS| | |
| Input capacitance | 4.5pF typ, 7.0pF max |
| Output capacitance | 1.5pF typ, 3.0pF max |
| TJ °C | 135°C |
| PTOT mW | 310mW |
Outlines & pinout:
Explanation of JFET parameters
| Parameter | Explanation |
|---|---|
| Operational mode | This details whether the FET is an enhancement or depletion mode |
| Channel type | The channel of the JFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier. |
| Drain to Source voltage VDSS | This is the maximum voltage that can be sustained between the drain and source |
| Gate to source voltage VGSS | This is the maximum voltage that can be sustained between the drain and the gate. |
| Maximum drain current continuous ID | This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values |
| Parameter | Explanation |
|---|---|
| Zero gate voltage drain current IDSS | This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this. |
| Gate threshold voltage VGS(th) | This is the minimum gate-to-source voltage, VGS required to create a conductive channel between the source and drain terminals |
| Static drain source ON resistance RDS(ON) | This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this. |
| Drain source ON voltage VDS(ON) | This is the voltage across the device when it is turned on. Again the test conditions are given. |
| Forward transconductance gFS | Forward transconductance also given the letters gm is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔVGS, with the drain-source voltage, VDS held constant. |
These are the main JFET parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The 2N5457 is available from a number of stockists and electronic component distributors many of which are given in the table below.
2N5457 Component Distributor, Stock and Pricing
• Further details
The 2N5457 features a number of key parameters including N−Channel for Higher Gain, interchangeable source and drain, igh AC Input impedance, high DC Input resistance, low transfer and input capacitance, low cross−modulation and intermodulation distortion, and a plastic encapsulated package.
Written by Ian Poole .
Experienced electronics engineer and author.
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