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J111 JFET Data
Data for the J111 JFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.
The J111 is a leaded N-channel junction field-effect transistor (JFET) primarily known for its use as a fast analogue switch in high-input impedance applications.
Its key characteristics include a very low rDSon and high transconductance, making it highly effective for chopping and sample-and-hold circuits.
The J111 is also often used as a general purpose JFET.
Key details and performance parameters for the J111 JFET.
| J111 JFET datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Brief description | N-channel depletion switching FET |
| Package type | TO92 |
| Operational mode | Depletion |
| Channel type | N-channel |
| Gate to Source voltage VGS | -35V DC |
| Drain to gate voltage VDG | -35V DC |
| Gate current IG | 50mA DC |
| Drain cutoff current ID(off) | 1.0nA max |
| Zero gate voltage drain current IDSS | 20mA min |
| Gate threshold voltage VGS(th) | |
| Static drain source ON resistance RDS(ON) | 30&Oega; max |
| Drain gate and source ON capacitance Cdg(on) | 28pF max |
| Drain gate OFF capacitance Cdg(off) | 5.0pF max |
| Source gate OFF capacitance Csg(off) | 5.0pF max |
| TJ °C | -65 - +150°C |
| PTOT mW | 350mW |
| Primary manufacturer | ON Semiconductor |
Outlines & pinout:
Explanation of JFET parameters
| Parameter | Explanation |
|---|---|
| Operational mode | This details whether the FET is an enhancement or depletion mode |
| Channel type | The channel of the JFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier. |
| Drain to Source voltage VDSS | This is the maximum voltage that can be sustained between the drain and source |
| Gate to source voltage VGSS | This is the maximum voltage that can be sustained between the drain and the gate. |
| Maximum drain current continuous ID | This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values |
| Parameter | Explanation |
|---|---|
| Zero gate voltage drain current IDSS | This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this. |
| Gate threshold voltage VGS(th) | This is the minimum gate-to-source voltage, VGS required to create a conductive channel between the source and drain terminals |
| Static drain source ON resistance RDS(ON) | This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this. |
| Drain source ON voltage VDS(ON) | This is the voltage across the device when it is turned on. Again the test conditions are given. |
| Forward transconductance gFS | Forward transconductance also given the letters gm is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔVGS, with the drain-source voltage, VDS held constant. |
These are the main JFET parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The J111 is available from a number of stockists and electronic component distributors many of which are given in the table below.
J111 Component Distributor, Stock and Pricing
• Further details
The J111 chopper JFET is similar to the J112 which has slightly different values of VGS(off), IDSS and a few other characteristics.
Written by Ian Poole .
Experienced electronics engineer and author.
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