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LSJ74 JFET Data

Data for the LSJ74 JFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.

The LSJ74 single, ultra-Low noise, P-channel JFET amplifier is a direct replacement for the Toshiba 2SJ74. It is ideal for Ultra-Low Noise Audio/Acoustic Applications.

The LSJ74 is available in the TO-92 3L RoHS, SOT-89 3L RoHS, as well as in die form.

Key details and performance parameters for the LSJ74 JFET.

LSJ74 JFET datasheet parameters & data
Parameters	Details
Brief description	High Input Impedance, Ultra-Low Noise, Single P-Channel JFET
Package type	TO92, SOT89-3
Gate to source breakdown voltage BV_GSS	-25V min at VDS = 0V and ID = -100µA
Drain source saturation current I_DSS	LSJ74A: -2.6mA min, -6.5mA max LSJ74B: -6.0mA min, -12mA max LSJ74C: -10mA min, -20mA max LSJ74D: -17mA min, -30mA max
Gate operating current I_G	50µA max
Gate source leakage current current I_GSS	1nA max
Full conduction transconductance g_FS	14mS min, 22mS typical at VDS = 10V and ID = 2mA
Typical conduction transconductance g_FS	8mS min, 122mS typical at VDS = -10V and VGS = 0V
Input capacitance	105pF
Transfer reverse capacitance	32pF
T_J °C	135°C
P_TOT mW	400mW
Primary manufacturer	Linear Systems

Outlines & pinout:

Explanation of JFET parameters

Parameter	Explanation
Operational mode	This details whether the FET is an enhancement or depletion mode
Channel type	The channel of the JFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier.
Drain to Source voltage V_DSS	This is the maximum voltage that can be sustained between the drain and source
Gate to source voltage V_GSS	This is the maximum voltage that can be sustained between the drain and the gate.
Maximum drain current continuous I_D	This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values

Parameter	Explanation
Zero gate voltage drain current I_DSS	This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this.
Gate threshold voltage V_GS(th)	This is the minimum gate-to-source voltage, V_GS required to create a conductive channel between the source and drain terminals
Static drain source ON resistance R_DS(ON)	This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this.
Drain source ON voltage V_DS(ON)	This is the voltage across the device when it is turned on. Again the test conditions are given.
Forward transconductance g_FS	Forward transconductance also given the letters g_m is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔV_GS, with the drain-source voltage, V_DS held constant.

These are the main JFET parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.

Read more about . . . . FET Specifications & Parameters.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.