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FGD3440G2-F085 400V N-Channel IgnitionIGBT Data

Data for the FGD3440G2-F085 400V N-Channel Ignition IGBT in a TO252 package including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.

The FGD3440G2-F085 IGBT is an N-channel ignition IGBT aimed at applications such as automotive ignition coil driver circuits and coil-on-plug applications.

Key details and performance parameters for the FGD3440G2-F085 IGBT, insulated gate bipolar transistor.

FGD3440G2-F085 IGBT insulated gate bipolar transistor datasheet parameters & data
Parameters	Details
Brief description	400V N-Channel Ignition
Package type	TO252
Breakdown Collector-Emitter Voltage BV_CES	370V min, 400V typ, 430V max
Emitter-Collector Voltage BV_ECS	28V min
Gate-emitter breakdown voltage BV_GES	±12V min, ±14V typ
Maximum continuous collector current I_C	26.9A at 25°C 25A at 110°C
Collector power dissipation P_C	166W at 25°C, above this derated by 1.1W/°C
Gate-emitter threshold voltage V_GE(th)	1.3V min, 1.7V typ, 2.2V max for IC = 1mA and VGE = VECE at 25°C 0.75V min, 1.2V typ, 1.8V max for IC = 1mA and VGE = VECE at 150°C
Gate-emitter leakage current I_GES
Collector-emitter saturation voltage V_CE(sat)
Maximum junction temperature T_J °C	175°C
Primary manufacturer	On-Semiconductor

Outlines & pinout:

FGD3440G2-F085 outline & pinout

Explanation of IGBT parameters

Parameter	Explanation
Collector-Emitter Voltage V_CES	This is the absolute maximum operating voltage for the IGBT. It is often specified at a given temperature.
Gate-emitter voltage V_GES	This is te maximum operating voltage between the gate and emitter of the device.
Transient gate-emitter voltage V_GEM	This is the maximum gate emitter voltage that can be withstood for a short period - the time period of the pulse should be specified.
Maximum continuous collector current I_C	This is the maximum continuous current that the device can handle. This is normally specified for one or more temperatures.
Maximum collector current pulsed I_CM	This is the maximum current that cna be handled for a short period - the period of the pulse should also be specified.
Collector power dissipation P_C	This is the maximum power that can be dissipated by the collector - often a temperature is specified and often a derating as well for higher temperatures.
Collector-emitter breakdown voltage BV_CES	This is the voltage at which the device becomes liable to break down. It is greater or equal to the maximum operating voltage.
Gate-emitter threshold voltage V_GE(th)	This is the voltage at which the device starts to turn on.

Parameter	Explanation
Gate-emitter leakage current I_GES	The leakage current into / out of the gate. Being a MOS-type device this is normally very low.
Collector-emitter saturation voltage V_CE(sat)	Similar to a standard bipolar transistor, an IGBT has a saturation voltage when the device is fully turned on.
Input capacitance	This is the capacitance for the gate of the device
Output capacitance	This is the capacitance seen at the output of the IGBT.
Reverse transfer capacitance capacitance	This is the capacitance between the gate and the collector terminals.
Transconductance	This is defined as the ratio of a change in the collector current to the corresponding change in the gate-emitter voltage and it is measured in terms of conductance in Siemens.
Maximum junction temperature T_J °C	This is the maximum temperature that the junction can withstand and it should be remembered that the junction will be above the package temperature and the external ambient temperature.

These are the main IGBT parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.

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Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The FGD3440G2-F085 is available from a number of stockists and electronic component distributors many of which are given in the table below.

FGD3440G2-F085 Component Distributor, Stock and Pricing

• Further details

The device has other variants available in other packages: this one the FGD3440G2-F085 in a TO252 package; the FGB3440G2-F085 in a TO263 package; and the FGP3440G2-F085 in a TO220 package.