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IGD03N120S7 IGBT Data

Data for the IGD03N120S7 1200V IGBT including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.

Key details and performance parameters for the IGD03N120S7 IGBT, insulated gate bipolar transistor.

IGD03N120S7 IGBT insulated gate bipolar transistor datasheet parameters & data
Parameters	Details
Brief description	Short circuit rugged 1200 V T
Package type	TO252-3L
Collector-Emitter Voltage V_CES	1200V
Gate-emitter voltage V_GES	±20V
Transient gate-emitter voltage V_GEM	±25V
Maximum continuous collector current I_C	10A at 25°C, 6A at 100°C
Collector power dissipation P_C	45W at 25°C, 18W at 100°C
Gate-emitter threshold voltage V_GE(th)	5.15V min, 5.7V typ, 6.45V max for Ic = 0.06mA and VCE = VGE
Gate-emitter leakage current I_GES	100nA
Collector-emitter saturation voltage V_CE(sat)	1.65V typ, 2V max at 25°C, 2V typical at 150°C
Input capacitance	0.5nF typ
Output capacitance	18pF typ
Reverse transfer capacitance capacitance	2pF typ
Transconductance	1.8S
Primary manufacturer	Infineon

Outlines & pinout:

Explanation of IGBT parameters

Parameter	Explanation
Collector-Emitter Voltage V_CES	This is the absolute maximum operating voltage for the IGBT. It is often specified at a given temperature.
Gate-emitter voltage V_GES	This is te maximum operating voltage between the gate and emitter of the device.
Transient gate-emitter voltage V_GEM	This is the maximum gate emitter voltage that can be withstood for a short period - the time period of the pulse should be specified.
Maximum continuous collector current I_C	This is the maximum continuous current that the device can handle. This is normally specified for one or more temperatures.
Maximum collector current pulsed I_CM	This is the maximum current that cna be handled for a short period - the period of the pulse should also be specified.
Collector power dissipation P_C	This is the maximum power that can be dissipated by the collector - often a temperature is specified and often a derating as well for higher temperatures.
Collector-emitter breakdown voltage BV_CES	This is the voltage at which the device becomes liable to break down. It is greater or equal to the maximum operating voltage.
Gate-emitter threshold voltage V_GE(th)	This is the voltage at which the device starts to turn on.

Parameter	Explanation
Gate-emitter leakage current I_GES	The leakage current into / out of the gate. Being a MOS-type device this is normally very low.
Collector-emitter saturation voltage V_CE(sat)	Similar to a standard bipolar transistor, an IGBT has a saturation voltage when the device is fully turned on.
Input capacitance	This is the capacitance for the gate of the device
Output capacitance	This is the capacitance seen at the output of the IGBT.
Reverse transfer capacitance capacitance	This is the capacitance between the gate and the collector terminals.
Transconductance	This is defined as the ratio of a change in the collector current to the corresponding change in the gate-emitter voltage and it is measured in terms of conductance in Siemens.
Maximum junction temperature T_J °C	This is the maximum temperature that the junction can withstand and it should be remembered that the junction will be above the package temperature and the external ambient temperature.

These are the main IGBT parameters that have been included in our list. There are others, but these are the main ones and they help quantify the main elements of the performance.

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Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.