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D44H11 Transistor Data

Key transistor data for the D44H11 transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.

The D44H11 is is manufactured in low voltage multi-epitaxial planar technology. The devices are very useful and commonly available and are intended for general purpose linear and switching applications.

The D44H11 is essentially a higher voltage version of the D44H8 which can withstand a VCEO of 60V rather than the 80V of the D44H11.

The D44H11 has a complementary PNP transistor in the form of the D45H11 and this enables these to be used in complementary power output stages.

Key details and performance parameters for the D44H11 transistor.

D44H11 transistor datasheet parameters & data
Parameters	Details
Transistor type	NPN power transistor
Package type	TO220
V_CEO max (V)	80V
V_EBOmax (V)	5V
Collector current I_C max (A)	10A
Peak collector current I_CM max (A)	20A
T_J Max °C	150°C max
P_TOT mW	50W at 25°C
f_T min (MHz)
h_FE	60 min at IC = 2A and VCE = 1V 40 min at IC = 4A and VCE = 1V
Similar / equivalents

Outline & outline:

Explanation of transistor parameters

Parameter	Explanation
V_CBO Max	Maximum collector-base voltage with emitter open circuit .
V_CEO Max	Maximum collector-emitter voltage with base open circuit.
V_EBO Max	Maximum emitter-base voltage with collector open circuit.
V_CEsat (included where applicable)	The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch).
I_C Max	Maximum collector current.

Parameter	Explanation
T_J	Maximum junction temperature.
P_TOT Max	Maximum device dissipation normally in free air at 25°C unless other conditions indicated.
f_T Min	Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity.
C_OB Max	Maximum collector capacitane, normally measured with emitter open circuit.
h_FE	DC current gain for H_FE at I_C. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.]
P_TOT Max	Maximum device dissipation normally in free air at 25°C unless other conditions indicated.

These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.

Read more about . . . . Transistor Data-sheet Specifications & Parameters.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The D44H11 is available from a number of stockists and electronic component distributors many of which are given in the table below.

D44H11 Component Distributor, Stock and Pricing

• Notable features

The D44H11 is a medium-power NPN silicon bipolar transistor in a TO-220 package, optimized for low-saturation switching and high-current amplification in general-purpose power applications.

High Current Handling : Continuous collector current up to 10 A, enabling robust performance in demanding loads.
Low Saturation Voltage : VCE(sat) maximum of 0.2 V at 3 A, minimizing conduction losses for efficient switching.
Fast Switching Speed : Optimized for quick turn-on/off times, ideal for high-frequency PWM applications.
High Power Dissipation : Up to 50 W, with excellent thermal characteristics for reliable operation under load.
Wide Voltage Rating : Collector-emitter breakdown voltage of 80 V, suitable for low-to-medium voltage circuits.
High Current Gain : hFE range of 40-250, providing flexibility in amplification stages with low base drive.
Multi-Epitaxial Planar Technology : Enhances ruggedness and reduces secondary breakdown risks.
Complementary Pair : Pairs with D45H11 PNP for push-pull configurations in audio and motor drives.

• Typical applications summary

Application Category	Typical Use Case	Device Feature Utilised
Power Switching	Relay drivers and solenoid controls in industrial automation.	Low VCE(sat) (0.2 V) and 10 A current rating for efficient on-state operation.
Audio Amplifiers	Output stages in class AB amplifiers.	High hFE (40-250) and complementary pairing for low-distortion push-pull designs.
Motor Drives	H-bridge drivers for DC motors in robotics.	Fast switching and 80 V rating for PWM speed control.
Power Supplies	Series pass regulators and offline converters.	50 W dissipation and multi-epitaxial technology for thermal stability.
General Amplification	Driver stages in instrumentation amplifiers.	High gain and low saturation for linear signal boosting.

The D44H11 is a particularly popular transistor that is widely available and in view of its current popularity, it is likely to remain so for many years.