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DXTN78100CFG Transistor Data
Key transistor data for the DXTN78100 transistor including key electrical parameters, pinout, package type and many other key transistor datasheet details.
The DXTN78100CFG is one of a series of modern very low on resistance bipolar transistors from Diodes Inc. which are intended for high performance automotive circuits, although there are many other uses.
The DXTN78100CFG is similar to the DXTN78030DFG and DXTN78060DFG but it has a higher voltage capability opening its use out to more applications.
However the current capability is lower, the saturation voltage is slightly higher, amd hFE is lower.
Key details and performance parameters for the DXTN78100 transistor.
| DXTN78100 transistor datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Transistor type | NPN |
| Package type | PowerDI 3333-8 |
| VCBO max (V) | 150V |
| VCEO max (V) | 100V |
| VEBOmax (V) | 8V |
| VCEsat (V) | 80mV typ at IC = 100mA and IB = 1mA 100mV typ 150mV max at IC = 1A and IB = 20mA 40mV typ 60mV max at IC = 1A and IB = 100mA 70mV typ 120mV max at IC = 2A and IB = 200mA 130mV typ 340mV max at IC = 4A and IB = 400mA |
| IC max | 2A with device mounted with collector tab on FR4PCB in still air 4A with device mounted with collector tab on 15mm x 15mm 2oz copper |
| TJ °C | -55 - +175°C |
| PTOT mW | 900mW, 2.4W when mounted on 25 x 25mm 2oz copper |
| fT min (MHz) | 150 MHz min, 210MHz typ |
| COB | 12.5pF |
| hfe | 200 min, 320 typ for Ic = 10mA & VCE = 2V 250 min, 320 typ, 420 max for Ic = 100mA & VCE = 2V 210 min, 300 typ for Ic = 500mA & VCE = 2V 140 min, 200 typ for Ic = 1A & VCE = 2V 35 min, 80 typ for Ic = 2A & VCE = 2V 10 min, 30 typ for Ic = 4A & VCE = 2V |
| Primary manufacturer | Diodes Inc |
Outline & pinout:
Explanation of transistor parameters
| Parameter | Explanation |
|---|---|
| VCBO Max | Maximum collector-base voltage with emitter open circuit . |
| VCEO Max | Maximum collector-emitter voltage with base open circuit. |
| VEBO Max | Maximum emitter-base voltage with collector open circuit. |
| VCEsat (included where applicable) | The voltage drop across the collector-emitter when the transistor is fully saturated (acting as a closed switch). |
| IC Max | Maximum collector current. |
| Parameter | Explanation |
|---|---|
| TJ | Maximum junction temperature. |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
| fT Min | Minimum cutoff frequency at which the current gain in a common emitter circuit falls to unity. |
| COB Max | Maximum collector capacitane, normally measured with emitter open circuit. |
| hFE | DC current gain for HFE at IC. [Note hfe is the small signal gain and although this may be slightly different, the transistor current gain will vary considerably from ne transistor to the next of the same type.] |
| PTOT Max | Maximum device dissipation normally in free air at 25°C unless other conditions indicated. |
These are the main transistor parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the transistor.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The DXTN78100 is available from a number of stockists and electronic component distributors many of which are given in the table below.
DXTN78100 Component Distributor, Stock and Pricing
• Notable features
The DXTN78100CFGQ is a high-voltage, ultra-low saturation NPN bipolar transistor from Diodes Incorporated, designed for efficient switching in automotive and industrial power management applications.
High Voltage Capability: BVCEO > 100V and BVCBO > 150V, suitable for applications requiring robust voltage handling.
Medium Current Rating: Continuous collector current of 4A with peak pulse up to 8A for reliable medium-power operation.
Ultra-Low Saturation Voltage: VCE(sat) typically < 60mV at 1A, reducing power losses and improving efficiency in switching.
High Gain Characteristics: hFE between 200-420 at lower currents, maintaining good performance across operating range.
Extended Temperature Range: Operational from -55°C to +175°C, ideal for extreme environmental conditions.
Automotive Compliance: AEC-Q101 qualified, PPAP capable, and produced in IATF 16949 facilities for automotive reliability.
Thermally Efficient Package: PowerDI3333-8 surface-mount package with wettable flanks for better thermal dissipation and this also enables better AOI inspection than is possible with some packages that have underside solder pads or solder 'balls.'
Complementary PNP Option: Pairs with DXTP78100CFGQ for push-pull and complementary circuit designs.
• Typical applications summary
The DXTN78100CFGQ transistor is aimed at the automotive industry, and the device fits a number of functions within this area as well as other areas as well.
| Application Category | Typical Use Case | Device Feature Utilised |
|---|---|---|
| Gate Driving | Driving MOSFET/IGBT gates in power converters | High gain and low saturation voltage for fast, efficient drive |
| Load Switching | High-side/low-side load switches in automotive modules | High voltage rating and low power loss in on-state |
| Power Management | Linear regulators and DC-DC converter control | Ultra-low VCE(sat) and high-temperature operation |
| Actuator Driving | Control of motors, solenoids, and relays | Current handling and automotive qualification |
| General Switching | Power distribution and protection circuits | Robust voltage ratings and thermal efficiency |
Written by Ian Poole .
Experienced electronics engineer and author.
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