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CSD01060E SiC Schottky Diode Data

Key data for the CSD01060E silicon carbide Schottky diode including key electrical parameters, performance, features, outline, package type and many other key datasheet details.

Key details and datasheet performance parameters for the CSD01060E SiC Schottky diode.

CSD01060E SiC Schottky diode datasheet parameters & data
Parameters	Details
Diode type	600 V, 1 A, Silicon Carbide Schottky Diode
Package type	TO252-2L
Repetitive peak reverse voltage, V_RRM	600V
Surge reverse voltage, V_RSM	600V
DC blocking voltage, V_DC	600V
Forward continuous current, I_FRM	4A at 25°C, 2A at 135°C, 1A at 158°C
Non-repetitive forward surge current, I_FSM	9A at 25°C 1.5ms half sine wave 32A at 25°C for 10µs pulse
Power dissipation, P_TOT	21.4W at 25°C, 7.1W at 125°C
Junction temperature (°C)	-55 - +175°C
Forward voltage V_F	1.6V typ, 1.8V max at 1A at 25°C 2.0V typ, 2.4V max at 1A at 175°C
Reverse leakage I_R	20µA typ and 100µA max at VR = 600V and TJ = 25°C 40µA typ and 500µA max at VR = 600V and TJ = 150°C
Primary manufacturer	Wolfspeed / Cree

Outline & pinout:

Explanation of major silicon carbide Schottky diode parameters

Parameter	Explanation
Repetitive peak reverse voltage, V_RRM	This is the maximum value of the short period peak reverse voltage that can be sustained.
Working peak reverse voltage, V_RWM	This is the maximum value of the continuous reverse voltage that can be applied to the diode.
DC blocking voltage, V_R	This is the maximum reverse DC voltage that should be applied across the diode.
RMS reverse voltage, V_R(RMS)	As many AC waveforms are quoted in RMS, this is the maximum reverse voltage that can be sustained where the voltage is expressed in terms of its RMS value.
Forward continuous current, I_F	This is the maximum forward current that can be sustained by the diode.
Average rectified current, I_F	This is the maximum average current value that can be handled by the diode. The parameter often states the load as this will affect the operation of the diode.
Non-repetitive forward surge current, I_FSM	This is the maximum surge current that can be handled - it should only be present for a short time.

Parameter	Explanation
Power dissipation, P_TOT	The maximum power dissipation that can be sustained within the device.
Junction temperature (°C)	This is the maximum temperature of the PN junction that can be sustained. Remember that the junction temperature can be much higher than the ambient temperature of the equipment.
Forward voltage V_F	This parameter gives the forward voltage drop for a particular current passed through the diode.
Breakdown voltage V_BR	This is the minimum voltage at which the diode may breakdown. If the current is not limited it will lead to the destruction of the device.
Leakage current I_R	This is the current that flows under stated conditions when the diode is reverse biassed.
Diode capacitance C_D	The diode capacitance, C_D may also be referred to as the junction capacitance, C_J. All diodes have a certain capacitance across the PN junction. The value will be stated for a given reverse voltage.
Reverse recovery time	If a diode is initially driven in forward bias, and the polarity suddenly switches to reverse bias, the diode will still remain conducting for some time. The reverse recovery time is the time required for conduction to settle into the reverse bias state.

These are the main Schottky diode parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the diode.

Read more about . . . . Diode Specifications & Parameters.

Read more about . . . . Silicon Carbide Schottky Diode Technology.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The CSD01060E is available from a number of stockists and electronic component distributors many of which are given in the table below.

CSD01060E Component Distributor, Stock and Pricing

• Notable features

The Wolfspeed CSD01060E is a 600V, 1A (up to 4A depending on thermal conditions) Silicon Carbide (SiC) Schottky Diode, a "Zero Recovery" rectifier designed to significantly boost efficiency and performance in high-frequency power electronics applications due to the superior properties of the SiC material.

Zero Reverse Recovery Charge (Qrr): This SiC diode, being a majority carrier device, eliminates the reverse recovery charge and associated current tail found in traditional silicon PN junction diodes. This essentially removes switching losses caused by the diode, making it ideal for high-speed switching applications ($>100 \text{kHz}$).
Temperature-Independent Switching: The switching characteristics of the diode remain virtually constant across its wide operating temperature range (up to +175°C), which greatly simplifies design and thermal management compared to silicon counterparts whose performance degrades at higher temperatures.
Positive Temperature Coefficient on Forward Voltage (VF): The forward voltage increases slightly with temperature, which is a desirable characteristic that allows for easy and safe paralleling of multiple diodes without the risk of thermal runaway, as the current will naturally share between devices.
Extremely Fast Switching and Low Capacitance: The combination of zero Qrr and very low output capacitance (C) enables high-frequency operation and reduces the size and cost of passive components like inductors and capacitors in the power supply circuit.
TO-252-2 (DPAK) Surface Mount Package: The surface-mount DPAK package is suitable for compact, high-density designs where space is limited on the printed circuit board.

• Typical applications summary

Application Category	Typical Use Case	Device Feature Utilised
Power Factor Correction (PFC) Circuits	Boost diodes in Continuous Conduction Mode (CCM) PFC for 100W−200W power supplies.	Zero Reverse Recovery eliminates switching loss, leading to >98% efficiency and reduced heat sink size.
Switch Mode Power Supplies (SMPS)	Output rectification stage in high-density server, telecom, and industrial power supplies.	High-frequency capability and low switching losses allow for higher power density (smaller, lighter design).
Electric Vehicle (EV) Charging Systems	Auxiliary power supplies and low-power stages within on-board chargers.	175∘C operating junction temperature for robustness in automotive/high-temperature environments.
Uninterruptible Power Supplies (UPS)	Output stage rectifiers and reverse blocking diodes in medium-to-low power UPS systems.	Improved system efficiency minimizes cooling requirements and extendsbatteryrun−time.