Home » Component data » SiC Schottky diode data » this page

IDD03SG60C SiC Schottky Diode Data

Key data for the IDD03SG60C silicon carbide Schottky diode including key electrical parameters, performance, features, outline, package type and many other key datasheet details.

The IDD03SG60C is a 3rd Generation thinQ!™ Silicon Carbide (SiC) Schottky Diode manufactured by Infineon Technologies. It is a high-performance power semiconductor device designed for fast switching applications.

Key specifications include a 600 V repetitive peak reverse voltage (VRRM) and a 3 A continuous forward current (IF) at a case temperature (TC) less than 130∘C, packaged in a surface-mount PG-TO252-3 (DPAK).

Key details and datasheet performance parameters for the IDD03SG60C SiC Schottky diode.

IDD03SG60C SiC Schottky diode datasheet parameters & data
Parameters	Details
Diode type	SMD 600V 3A SiC Schottky diode
Package type	TO252-3
DC blocking voltage, V_DC	600V min
Forward continuous current, I_F	3A at temperatures up to 130°C
Non-repetitive forward surge current, I_FSM	11.5A for 10ms at 25°C and 9.7A for 10ms at 150°C
Power dissipation, P_TOT	38W
Junction temperature (°C)	-55 to +175°C
Forward voltage V_F	2.1V typ, 2.3V max at 3A at 25°C 2.8V typ at 3A at 150°C
Reverse leakage I_R	0.23 µA typ, 15µA max at VR=600V and at 25°C 1 µA typ, 150µA max at VR=600V and at 150°C
Primary manufacturer	Infineon

Outline & pinout:

Explanation of major silicon carbide Schottky diode parameters

Parameter	Explanation
Repetitive peak reverse voltage, V_RRM	This is the maximum value of the short period peak reverse voltage that can be sustained.
Working peak reverse voltage, V_RWM	This is the maximum value of the continuous reverse voltage that can be applied to the diode.
DC blocking voltage, V_R	This is the maximum reverse DC voltage that should be applied across the diode.
RMS reverse voltage, V_R(RMS)	As many AC waveforms are quoted in RMS, this is the maximum reverse voltage that can be sustained where the voltage is expressed in terms of its RMS value.
Forward continuous current, I_F	This is the maximum forward current that can be sustained by the diode.
Average rectified current, I_F	This is the maximum average current value that can be handled by the diode. The parameter often states the load as this will affect the operation of the diode.
Non-repetitive forward surge current, I_FSM	This is the maximum surge current that can be handled - it should only be present for a short time.

Parameter	Explanation
Power dissipation, P_TOT	The maximum power dissipation that can be sustained within the device.
Junction temperature (°C)	This is the maximum temperature of the PN junction that can be sustained. Remember that the junction temperature can be much higher than the ambient temperature of the equipment.
Forward voltage V_F	This parameter gives the forward voltage drop for a particular current passed through the diode.
Breakdown voltage V_BR	This is the minimum voltage at which the diode may breakdown. If the current is not limited it will lead to the destruction of the device.
Leakage current I_R	This is the current that flows under stated conditions when the diode is reverse biassed.
Diode capacitance C_D	The diode capacitance, C_D may also be referred to as the junction capacitance, C_J. All diodes have a certain capacitance across the PN junction. The value will be stated for a given reverse voltage.
Reverse recovery time	If a diode is initially driven in forward bias, and the polarity suddenly switches to reverse bias, the diode will still remain conducting for some time. The reverse recovery time is the time required for conduction to settle into the reverse bias state.

These are the main Schottky diode parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the diode.

Read more about . . . . Diode Specifications & Parameters.

Read more about . . . . Silicon Carbide Schottky Diode Technology.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The IDD03SG60C is available from a number of stockists and electronic component distributors many of which are given in the table below.

IDD03SG60C Component Distributor, Stock and Pricing

• Notable features

The IDD03SG60C is part of the Infineon CoolSiC™ Schottky Diode family, leveraging the superior material properties of Silicon Carbide to achieve significant performance improvements over traditional Silicon-based diodes, especially in high-frequency and high-efficiency power conversion systems.

Revolutionary Semiconductor Material: Details the use of Silicon Carbide (SiC), a wide bandgap material that enables a much higher breakdown field strength and thermal conductivity compared to silicon, allowing for 600 V operation with a Schottky barrier structure.
Absence of Reverse Recovery Charge (Qrr): A benchmark feature of SiC Schottky diodes; the conduction is due only to majority carriers (electrons), meaning there's no minority carrier storage or recombination process, which virtually eliminates the reverse recovery current and switching losses associated with it. The total capacitive charge (QC) is typically 3.2 nC.
Temperature-Independent Switching Behaviour: The device's fast switching characteristics are independent of junction temperature (Tj), providing predictable and stable performance across the operating temperature range (typically up to 175°C).
Ultra-Fast Switching Speed: The switching time (tc) is typically less than 10 ns, which is crucial for maximizing efficiency and allowing operation at very high switching frequencies (in the hundreds of kHz to MHz range).
High Operating Temperature: Optimized for high-temperature operation, the maximum junction temperature (Tj) is 175°C, which simplifies thermal management and enables higher power density designs by reducing cooling requirements.
High Surge Current Capability: The diode possesses a high non-repetitive peak forward current (IF,max), offering enhanced robustness against transient events in the power system.
Low Figure of Merit (QC/IF): The low capacitive charge, combined with the rated current, results in a low figure of merit, directly correlating to reduced switching losses and higher overall system efficiency compared to Si-based diodes.

• Typical applications summary

Application Category	Typical Use Case	Device Feature Utilised
Power Factor Correction (PFC)	Continuous Conduction Mode (CCM) PFC boost diode in Server/Telecom power supplies, PC power supplies.	Zero/No Reverse Recovery Charge, High Switching Speed, High Temperature Operation.
Renewable Energy Systems	Solar/Photovoltaic inverters and applications, Energy Storage Systems (ESS) converters.	High Efficiency (reduced losses), High Switching Speed, Robustness at high operating temperatures.
Uninterruptible Power Supplies (UPS)	High-frequency rectification stages in online or line-interactive UPS systems.	Fast Rectification/Switching, Reduced EMI due to no reverse recovery, Efficiency improvement.
General Power Conversion	Switched-Mode Power Supplies (SMPS), output rectification and anti-parallel diodes for MOSFETs / IGBTs in various hard-switching circuits.	Switching loss reduction, Temperature-Independent behavior, Enabling higher power density.