Home » Component data » SiC Schottky diode data » this page

IDH02G65C5 SiC Schottky Diode Data

Key data for the IDH02G65C5 silicon carbide Schottky diode including key electrical parameters, performance, features, outline, package type and many other key datasheet details.

The IDH02G65C5 SiC Schottky diode uses the Infineon ThinQ! Generation 5 process for leading edge technology SiC Schottky Barrier diodes.

The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology for this product.

The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).

Key details and datasheet performance parameters for the IDH02G65C5 SiC Schottky diode.

IDH02G65C5 SiC Schottky diode datasheet parameters & data
Parameters	Details
Diode type	650V 2A SiC Schottky diode
Package type	TO220-2
Repetitive peak reverse voltage, V_RRM	650V
Forward continuous current, I_F	2A
Average rectified current, I_F
Non-repetitive forward surge current, I_FSM	23A at 25°C, 22A at 150°C
Power dissipation, P_TOT	36W
Junction temperature (°C)	-55 to +175°C
Forward voltage V_F	1.5V typ, 1.7V max at 2 A and 25°C 1.8V typ, 2.1V max at 2 A and 150°C
Reverse leakage I_R	0.1µA typ, 35µA max at VR = 650V at TJ = 25°C 0.02µA typ, 12µA max at VR = 600V at TJ = 25°C 0.4µA typ, 240µA max at VR = 650V at TJ = 150°C
Diode capacitance C_D	70pF for VR = 1V, and 9.1pF for VR = 300V
Primary manufacturer	Infineon

Outline & pinout:

Explanation of major silicon carbide Schottky diode parameters

Parameter	Explanation
Repetitive peak reverse voltage, V_RRM	This is the maximum value of the short period peak reverse voltage that can be sustained.
Working peak reverse voltage, V_RWM	This is the maximum value of the continuous reverse voltage that can be applied to the diode.
DC blocking voltage, V_R	This is the maximum reverse DC voltage that should be applied across the diode.
RMS reverse voltage, V_R(RMS)	As many AC waveforms are quoted in RMS, this is the maximum reverse voltage that can be sustained where the voltage is expressed in terms of its RMS value.
Forward continuous current, I_F	This is the maximum forward current that can be sustained by the diode.
Average rectified current, I_F	This is the maximum average current value that can be handled by the diode. The parameter often states the load as this will affect the operation of the diode.
Non-repetitive forward surge current, I_FSM	This is the maximum surge current that can be handled - it should only be present for a short time.

Parameter	Explanation
Power dissipation, P_TOT	The maximum power dissipation that can be sustained within the device.
Junction temperature (°C)	This is the maximum temperature of the PN junction that can be sustained. Remember that the junction temperature can be much higher than the ambient temperature of the equipment.
Forward voltage V_F	This parameter gives the forward voltage drop for a particular current passed through the diode.
Breakdown voltage V_BR	This is the minimum voltage at which the diode may breakdown. If the current is not limited it will lead to the destruction of the device.
Leakage current I_R	This is the current that flows under stated conditions when the diode is reverse biassed.
Diode capacitance C_D	The diode capacitance, C_D may also be referred to as the junction capacitance, C_J. All diodes have a certain capacitance across the PN junction. The value will be stated for a given reverse voltage.
Reverse recovery time	If a diode is initially driven in forward bias, and the polarity suddenly switches to reverse bias, the diode will still remain conducting for some time. The reverse recovery time is the time required for conduction to settle into the reverse bias state.

These are the main Schottky diode parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the diode.

Read more about . . . . Diode Specifications & Parameters.

Read more about . . . . Silicon Carbide Schottky Diode Technology.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The IDH02G65C5 is available from a number of stockists and electronic component distributors many of which are given in the table below.

IDH02G65C5 Component Distributor, Stock and Pricing

• Notable features

The Infineon IDH02G65C5 is a 650V, 2A Silicon Carbide (SiC) Schottky Diode, part of the 5th Generation thinQ!™ series, designed to set a new benchmark for efficiency and switching performance in high-frequency power applications.

Zero Reverse Recovery: Unlike traditional silicon (Si) PN diodes, the SiC Schottky structure has virtually no reverse recovery charge (Qc) and no forward recovery. This eliminates switching losses, leading to a significant improvement in system efficiency.
Temperature Independent Switching: The diode's switching behaviour remains stable across its operating temperature range (Tj up to +175∘C), which simplifies thermal design and improves overall system reliability.
High Operating Temperature: It is rated for a maximum junction temperature (Tj,max) of +175∘C, enabling operation in high-power density environments and allowing for reduced heatsink size (System size / cost savings).
Low Figure of Merit: The 5th generation technology features a thin wafer design resulting in an improved Figure of Merit (Qc×Vf), meaning lower conduction and switching losses across all load conditions.
High Voltage Rating: With a repetitive peak reverse voltage (VRRM) of 650V, it is ideally suited for 400V/450V DC bus applications, where it is often paired with 650V Si MOSFETs (like Infineon's CoolMOS™).
Low Reverse Leakage: Exhibits very low reverse leakage current (IR), which contributes to reduced power loss during the diode's blocking state, especially at lower load conditions.

• Typical applications summary

Application Category	Typical Use Case	Device Feature Utilised
Power Factor Correction (PFC)	Continuous Conduction Mode (CCM) PFC stage in AC-DC power supplies	No Reverse Recovery, enabling higher switching frequencies and reducing switching losses in the boost diode.
Server/Telecom Power Supplies	High-efficiency SMPS (Switch-Mode Power Supplies) and power modules	High efficiency and high Tj,max, leading to increased power density and smaller magnetics (inductors/transformers).
Solar Inverters / UPS	Boost stages and output rectification in photovoltaic string inverters and Uninterruptible Power Supplies	Temperature Independent Switching and High Reliability, ensuring stable performance and longevity in demanding outdoor/industrial environments.
Electric Vehicle (EV) Charging	On-Board Chargers (OBCs) for EVs	High Efficiency and Compact TO-220 Package, facilitating higher power output from a constrained volume inside the vehicle.