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IDW30G120C5B SiC Schottky Diode Data

Key data for the IDW30G120C5B silicon carbide Schottky diode including key electrical parameters, performance, features, outline, package type and many other key datasheet details.

The IDW30G120C5B is a 5th Generation CoolSiC™ 1200 V SiC dual Schottky diode that can carry 2 x 15A at 175°C and more at lower junction temperatures.

It is intended for uses including solar inverters, uninterruptible power supplies, motor drives, and power factor correction, but in reality there are many more circuits for which it is well suited.

Key details and datasheet performance parameters for the IDW30G120C5B SiC Schottky diode.

IDW30G120C5B SiC Schottky diode datasheet parameters & data
Parameters	Details
Diode type	1200V 15/30A SiC Schottky dual diode
Package type	TO247-3L
Repetitive peak reverse voltage, V_RRM	1200V
DC blocking voltage, V_R	1200V at 25°C
Forward continuous current, I_F	15 / 30A (ie 15A per diode) at 150°C 20/40A at 135°C 44/87A at 25°C
Non-repetitive forward surge current (half sine wave tp=10ms) I_FSM	120/240A at 25°C 115/230A at 150°C
Non-repetitive forward surge current ( tp=10µs) I_{F max}	1230/2460A at 25°C
Power dissipation, P_TOT	166 / 332W
Junction temperature (°C)	-55 - +175°C
Forward voltage V_F	1.4V typ, 1.65V max at IF = 15/30A at 25°C 1.7V typ, 2.30V max at IF = 15/30A at 150°C
Reverse leakage I_R	9 / 17µA type 124 / 248 µA max at VR=1200V at 25°C 44 / 88µA type 640/ 1280 µA max at VR=1200V at 150°C
Primary manufacturer	Infineon

Outline & pinout:

Explanation of major silicon carbide Schottky diode parameters

Parameter	Explanation
Repetitive peak reverse voltage, V_RRM	This is the maximum value of the short period peak reverse voltage that can be sustained.
Working peak reverse voltage, V_RWM	This is the maximum value of the continuous reverse voltage that can be applied to the diode.
DC blocking voltage, V_R	This is the maximum reverse DC voltage that should be applied across the diode.
RMS reverse voltage, V_R(RMS)	As many AC waveforms are quoted in RMS, this is the maximum reverse voltage that can be sustained where the voltage is expressed in terms of its RMS value.
Forward continuous current, I_F	This is the maximum forward current that can be sustained by the diode.
Average rectified current, I_F	This is the maximum average current value that can be handled by the diode. The parameter often states the load as this will affect the operation of the diode.
Non-repetitive forward surge current, I_FSM	This is the maximum surge current that can be handled - it should only be present for a short time.

Parameter	Explanation
Power dissipation, P_TOT	The maximum power dissipation that can be sustained within the device.
Junction temperature (°C)	This is the maximum temperature of the PN junction that can be sustained. Remember that the junction temperature can be much higher than the ambient temperature of the equipment.
Forward voltage V_F	This parameter gives the forward voltage drop for a particular current passed through the diode.
Breakdown voltage V_BR	This is the minimum voltage at which the diode may breakdown. If the current is not limited it will lead to the destruction of the device.
Leakage current I_R	This is the current that flows under stated conditions when the diode is reverse biassed.
Diode capacitance C_D	The diode capacitance, C_D may also be referred to as the junction capacitance, C_J. All diodes have a certain capacitance across the PN junction. The value will be stated for a given reverse voltage.
Reverse recovery time	If a diode is initially driven in forward bias, and the polarity suddenly switches to reverse bias, the diode will still remain conducting for some time. The reverse recovery time is the time required for conduction to settle into the reverse bias state.

These are the main Schottky diode parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the diode.

Read more about . . . . Diode Specifications & Parameters.

Read more about . . . . Silicon Carbide Schottky Diode Technology.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The IDW30G120C5B is available from a number of stockists and electronic component distributors many of which are given in the table below.

IDW30G120C5B Component Distributor, Stock and Pricing

• Notable features

The IDW30G120C5B is a dual 1200 V, 30 A Silicon Carbide (SiC) Schottky diode in a TO-247-3 package, delivering exceptional efficiency and robustness for demanding power electronics.

No Reverse Recovery Current : Eliminates switching losses and EMI, enabling higher frequency operation compared to silicon diodes.
Low Forward Voltage Drop : Maximum 1.7 V at 30 A and 150°C, reducing conduction losses even at elevated temperatures.
High Surge Capability : Non-repetitive peak current up to 2460 A, ensuring reliability during transient events.
Wide Temperature Range : Operates from -55°C to 175°C, with temperature-independent switching for harsh environments.
dv/dt Ruggedness : Rated at 150 V/ns, providing robust performance under fast voltage transients.
Excellent Thermal Performance : Junction-to-case thermal resistance of 0.5 K/W max, minimizing heatsink requirements.
JEDEC Qualified : Meets industry standards for high-reliability applications, with Pb-free and RoHS compliance.
Low Capacitance : Total capacitance as low as 55 pF at 800 V, supporting high-power density designs.

• Typical applications summary

Application Category	Typical Use Case	Device Feature Utilised
Solar Inverters	High-efficiency rectification in photovoltaic systems.	No reverse recovery and low VF for reduced switching losses and higher energy yield.
Uninterruptible Power Supplies (UPS)	Output rectification and freewheeling in backup power systems.	High surge capability and dv/dt ruggedness for reliable operation during load transients.
Motor Drives	Antiparallel diodes in industrial variable frequency drives.	1200 V rating and excellent thermal performance for high-voltage, high-temperature environments.
Power Factor Correction (PFC)	Boost diode in active PFC stages for power supplies.	Temperature-independent switching and low capacitance for compact, efficient designs.
Electric Vehicle Chargers	Rectification in onboard and offboard EV charging systems.	High power density and reduced EMI for fast-charging infrastructure.
Industrial Power Supplies	High-voltage rectification in welding and telecom equipment.	JEDEC qualification and surge robustness for long-term reliability.