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STPSC40H12C Silicon Carbide Schottky Diode Data
Data for the STPSC40H12C SiC Schottky diode including its electrical parameters, performance, features, outline, package type and many other datasheet details.
The STPSC40H12C is a silicon carbide power Schottky diode offering a 1200V and 40 A capability.
It exhibits a negligible reverse recovery time and a switching behavior independent of temperature.
Key details and datasheet performance parameters for the STPSC40H12C diode.
| STPSC40H12C diode datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Diode type | SiC Schottky power diode |
| Package type | TO247 |
| Repetitive peak reverse voltage, VRRM | 1200V |
| Working peak reverse voltage, VRWM | 1200V |
| DC blocking voltage, VR | 1200V |
| Forward continuous RMS current, IF(RMS) | 38A |
| Average rectified current, IF | 20A per diode (40A total) at 150°C, and 38 / 76A at 25°C |
| Non-repetitive forward surge current, IFSM | 140A for 10ms sinusoid at 25°C 700A for 10µs square wave pulse at 25°C |
| Junction temperature (°C) | 150°C |
| Forward voltage VF | 1.35V typ 1.50V max for IF of 20A at 25°C 1.75V typ 2.25V max for IF of 20A at 1505°C |
| Reverse leakage IR | 10µA typ, 120µA max ar 1200V at 25°C 60µA typ, 800µA max ar 1200V at 150°C |
Outline & pinout:
Explanation of major silicon carbide Schottky diode parameters
| Parameter | Explanation |
|---|---|
| Repetitive peak reverse voltage, VRRM | This is the maximum value of the short period peak reverse voltage that can be sustained. |
| Working peak reverse voltage, VRWM | This is the maximum value of the continuous reverse voltage that can be applied to the diode. |
| DC blocking voltage, VR | This is the maximum reverse DC voltage that should be applied across the diode. |
| RMS reverse voltage, VR(RMS) | As many AC waveforms are quoted in RMS, this is the maximum reverse voltage that can be sustained where the voltage is expressed in terms of its RMS value. |
| Forward continuous current, IF | This is the maximum forward current that can be sustained by the diode. |
| Average rectified current, IF | This is the maximum average current value that can be handled by the diode. The parameter often states the load as this will affect the operation of the diode. |
| Non-repetitive forward surge current, IFSM | This is the maximum surge current that can be handled - it should only be present for a short time. |
| Parameter | Explanation |
|---|---|
| Power dissipation, PTOT | The maximum power dissipation that can be sustained within the device. |
| Junction temperature (°C) | This is the maximum temperature of the PN junction that can be sustained. Remember that the junction temperature can be much higher than the ambient temperature of the equipment. |
| Forward voltage VF | This parameter gives the forward voltage drop for a particular current passed through the diode. |
| Breakdown voltage VBR | This is the minimum voltage at which the diode may breakdown. If the current is not limited it will lead to the destruction of the device. |
| Leakage current IR | This is the current that flows under stated conditions when the diode is reverse biassed. |
| Diode capacitance CD | The diode capacitance, CD may also be referred to as the junction capacitance, CJ. All diodes have a certain capacitance across the PN junction. The value will be stated for a given reverse voltage. |
| Reverse recovery time | If a diode is initially driven in forward bias, and the polarity suddenly switches to reverse bias, the diode will still remain conducting for some time. The reverse recovery time is the time required for conduction to settle into the reverse bias state. |
These are the main Schottky diode parameters that have been included in our list. There are others, but these help quantify the main elements of the performance of the diode.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The STPSC40H12C is available from a number of stockists and electronic component distributors many of which are given in the table below.
STPSC40H12C Component Distributor, Stock and Pricing
• Further details
The STPSC40H12C diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
As a result of the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
The diode is particularly useful in power factor control, PFC and secondary side applications, and this diode will boost the performance in hard switching conditions.
The high forward surge capability of the diode ensures a good level of robustness during transient phases.
Written by Ian Poole .
Experienced electronics engineer and author.
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