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IMBG40R015M2H SiC MOSFET Data
Data for the IMBG40R015M2H 900V 20mΩ silicon carbide MOSFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.
The IMBG40R015M2H SiC MOSFET is one of the CoolSiC range from Infineon and provides a maximumoperating voltage of 400V, maximum current around 111A and a low level of RDS(ON) of around 25mΩ dependent upon the temperature.
Key details and performance parameters for the IMBG40R015M2H SiC MOSFET.
| IMBG40R015M2H Silicon Carbide MOSFET datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Brief description | 400V |
| Package type | D2PAK-7L / TO263-7L |
| Operational mode | Enhancement |
| Channel type | N-channel |
| Drain to Source voltage VDSS | 400V |
| Gate to source voltage VGSS | -7V - +23V |
| Maximum drain current continuous ID | 111A with VGS=18V at 25°C 79A with VGS=18V at 100°C |
| Maximum drain current pulsed ID | 333A at 25°C |
| Zero gate voltage drain current IDSS | 1µA typ, 75µA max at VDS=400V, VGS=0V and 25°C 2µA typ at VDS=400V, VGS=0V and 175°C |
| Gate threshold voltage VGS(th) | 3.5V min, 4.5V typ, 5.6V max with VGS=VDS and ID=9.7mA |
| Static drain source ON resistance RDS(ON) | 15mΩ typ, 19.1mΩ max at VGS=18V, ID=27.1A and 25°C 21.7mΩ typ, at VGS=18V, ID=27.1A and 175°C 18.4mΩ typ, at VGS=15V, ID=27.1A and 25°C |
| Input capacitance | 2100pF typ, 2730 max |
| Output capacitance | 300pF |
| Reverse transfer capacitance | 24pF |
| TJ °C | 175 |
| PTOT mW | 341W |
| Primary manufacturer | Infineon |
Outlines & pinout:
Explanation of SiC MOSFET parameters
| Parameter | Explanation |
|---|---|
| Operational mode | This details whether the FET is an enhancement or depletion mode |
| Channel type | The channel of the MOSFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier. |
| Drain to Source voltage VDSS | This is the maximum voltage that can be sustained between the drain and source |
| Gate to source voltage VGSS | This is the maximum voltage that can be sustained between the drain and the gate. |
| Maximum drain current continuous ID | This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values |
| Parameter | Explanation |
|---|---|
| Zero gate voltage drain current IDSS | This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this. |
| Gate threshold voltage VGS(th) | This is the minimum gate-to-source voltage, VGS required to create a conductive channel between the source and drain terminals |
| Static drain source ON resistance RDS(ON) | This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this. |
| Drain source ON voltage VDS(ON) | This is the voltage across the device when it is turned on. Again the test conditions are given. |
| Forward transconductance gFS | Forward transconductance also given the letters gm is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔVGS, with the drain-source voltage, VDS held constant. |
These are the main SiC MOSFET parameters that have been included in our list. Being a form of MOSFET, they are basically the same as other FETs and MOSFETs.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The IMBG40R015M2H is available from a number of stockists and electronic component distributors many of which are given in the table below.
IMBG40R015M2H Component Distributor, Stock and Pricing
• Further details
The low RDS ON of 28mΩ typical at 15V and the high maximum voltage along with all the other benefits of silicon carbide MOSFETs mean that this device is ideal for use in uninterruptible power supplies, DC-DC converters, boost inverters and other forms of switch mode power supply.
Written by Ian Poole .
Experienced electronics engineer and author.
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