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NTBG014N120M3P SiC MOSFET Data
Data for the NTBG014N120M3P 14mΩ 1200V silicon carbide MOSFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.
The NTBG014N120M3P SiC MOSFET provides a typical ON resistance of only 14mΩ and a maximum operating voltage of 1200V and it is contained in a TO263-7L or D2PAK-7L package package. Note that the D2PAK outline of the same as the TO263 which is the JEDEC terminology.
Key details and performance parameters for the NTBG014N120M3P SiC MOSFET.
| NTBG014N120M3P Silicon Carbide MOSFET datasheet parameters & data |
|
|---|---|
| Parameters | Details |
| Brief description | N-channel SiC MOSFET |
| Package type | D2PAK-7L / TO263-7L |
| Operational mode | Enhancement |
| Channel type | N-channel |
| Drain to Source voltage VDSS | 1200V |
| Drain to gate voltage VDGR | |
| Gate to source voltage VGSmax | -10 / +22V |
| Maximum drain current continuous ID | 150A at 25°C and 106A at 100°C |
| Maximum drain current pulsed ID | 452A |
| Zero gate voltage drain current IDSS | 100µA at 25°C and 1200V |
| Gate threshold voltage VGS(th) | 2.08V min, 3.0V Typ, 4.63V max at VGS = VDS, ID = 37mA |
| Static drain source ON resistance RDS(ON) | 14mΩ typ, 20mΩ max at VGS = 18V and ID = 74A 29mΩ typ at VGS = 18V and ID = 74A at 175°C |
| Forward transconductance gFS | 29 typ for VDS = 10V and ID = 74A |
| Input capacitance | 63132pF typ |
| Output capacitance | 259pF typ |
| Reverse transfer capacitance | 27pF typ |
| TJ °C | 175 |
| PTOT mW | 652W at 25°C and 326W at 100°C |
| Primary manufacturer | On Semiconductor |
Outlines & pinout:
Explanation of SiC MOSFET parameters
| Parameter | Explanation |
|---|---|
| Operational mode | This details whether the FET is an enhancement or depletion mode |
| Channel type | The channel of the MOSFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier. |
| Drain to Source voltage VDSS | This is the maximum voltage that can be sustained between the drain and source |
| Gate to source voltage VGSS | This is the maximum voltage that can be sustained between the drain and the gate. |
| Maximum drain current continuous ID | This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values |
| Parameter | Explanation |
|---|---|
| Zero gate voltage drain current IDSS | This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this. |
| Gate threshold voltage VGS(th) | This is the minimum gate-to-source voltage, VGS required to create a conductive channel between the source and drain terminals |
| Static drain source ON resistance RDS(ON) | This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this. |
| Drain source ON voltage VDS(ON) | This is the voltage across the device when it is turned on. Again the test conditions are given. |
| Forward transconductance gFS | Forward transconductance also given the letters gm is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔVGS, with the drain-source voltage, VDS held constant. |
These are the main SiC MOSFET parameters that have been included in our list. Being a form of MOSFET, they are basically the same as other FETs and MOSFETs.
Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.
Notes and supplementary information
• Availability & sources
The NTBG014N120M3P is available from a number of stockists and electronic component distributors many of which are given in the table below.
NTBG014N120M3P Component Distributor, Stock and Pricing
• Further details
This device is aimed at being used in circuits including solar inverters, electric vehicle charging stations, uninterruptible power supplies, energy storage systems and switch mode power supplies.
Written by Ian Poole .
Experienced electronics engineer and author.
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