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NTBG020N090SC1 SiC MOSFET Data

Data for the NTBG020N090SC1 900V 20mΩ silicon carbide MOSFET including electrical parameters, maximum current and voltage, pin connections, package type and many other datasheet details.

Key details and performance parameters for the NTBG020N090SC1 SiC MOSFET.

NTBG020N090SC1 Silicon Carbide MOSFET datasheet parameters & data
Parameters	Details
Brief description	900V
Package type	D2PAK-7L / TO263-7L
Operational mode	Enhancement
Channel type	N-channel
Drain to Source voltage V_DSS	900V
Drain to gate voltage V_DGR
Gate to source voltage V_GSS	+22 / -8V
Maximum drain current continuous I_D	112A at 25°C
Maximum drain current pulsed I_D	448A at 25°C
Zero gate voltage drain current I_DSS	100µA at VDS=900V, VGS=0V and 25°C 250µA at VDS=900V, VGS=0V and 175°C
Gate threshold voltage V_GS(th)	1.8V min, 2.6V typ, 4.3V max with VGS=VDS and ID=20mA
Static drain source ON resistance R_DS(ON)	20mΩ typ, 28mΩ max at VGS=15V, ID=60A and 25°C 16mΩ typ, at VGS=18V, ID=60A and 25°C 27mΩ typ, at VGS=15V, ID=60A and 175°C
Forward transconductance g_FS	49 for VDS=20V and ID=60A
Input capacitance	4415pF
Output capacitance	295pF
Reverse transfer capacitance	25pF
T_J °C	175
P_TOT mW	477W
Primary manufacturer	On Semiconductor

Outlines & pinout:

Explanation of SiC MOSFET parameters

Parameter	Explanation
Operational mode	This details whether the FET is an enhancement or depletion mode
Channel type	The channel of the MOSFET can either be an N-type channel where electrons are the majority carriers or P-type where holes are the majority current carrier.
Drain to Source voltage V_DSS	This is the maximum voltage that can be sustained between the drain and source
Gate to source voltage V_GSS	This is the maximum voltage that can be sustained between the drain and the gate.
Maximum drain current continuous I_D	This is the maximum current that can be carried byt he device. Sometimes there may be a differentiation between the continuous and pulsed or peak values

Parameter	Explanation
Zero gate voltage drain current I_DSS	This is the current carried by the device when the gate voltage is zero. The test conditions are normally stated for this.
Gate threshold voltage V_GS(th)	This is the minimum gate-to-source voltage, V_GS required to create a conductive channel between the source and drain terminals
Static drain source ON resistance R_DS(ON)	This is the resistance of the device when turned on. The test conditions of voltage and current are normally given for this.
Drain source ON voltage V_DS(ON)	This is the voltage across the device when it is turned on. Again the test conditions are given.
Forward transconductance g_FS	Forward transconductance also given the letters g_m is defined as the change in drain current (ΔID) for a small change in the gate-source voltage ΔV_GS, with the drain-source voltage, V_DS held constant.

These are the main SiC MOSFET parameters that have been included in our list. Being a form of MOSFET, they are basically the same as other FETs and MOSFETs.

Read more about . . . . FET Specifications & Parameters.

Read more about . . . . Silicon carbide MOSFET technology.

Please note, that the data given is the best estimate we can give within a tabulated summary of this nature. Parameters also vary between manufacturers. Electronics Notes cannot accept any responsibility for errors, inaccuracies, etc, although we do endevaour to ensure the data is as accurate as possible.

Notes and supplementary information

• Availability & sources

The NTBG020N090SC1 is available from a number of stockists and electronic component distributors many of which are given in the table below.

NTBG020N090SC1 Component Distributor, Stock and Pricing

• Further details

The low RDS ON of 28mΩ typical at 15V and the high maximum voltage along with all the other benefits of silicon carbide MOSFETs mean that this device is ideal for use in uninterruptible power supplies, DC-DC converters, boost inverters and other forms of switch mode power supply.